Optical near-field photocurrent spectroscopy: A new technique for analyzing microscopic aging processes in optoelectronic devices

Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 3981-3983

  Richter, A ^a   Tomm, J W ^a   Lienau, Ch ^a   Luft, J ^b  

^a MAX BORN INSTITUT   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; DEFECTS; LASER OPTICS; NONDESTRUCTIVE EXAMINATION; OPTICAL MICROSCOPY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

MACROSCOPIC PHOTOCURRENT SPECTRUM; NEAR FIELD OPTICS; NEAR FIELD PHOTOCURRENT SPECTROSCOPY;

SPECTROSCOPY;

EID: 0030400303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117844     Document Type: Article

References (11)

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