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Volumn 63, Issue 4, 1989, Pages 430-433

Stimulated emission in semiconductor quantum wire heterostructures

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Indexed keywords


EID: 33744886282     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.63.430     Document Type: Article
Times cited : (588)

References (17)
  • 13
    • 84927409233 scopus 로고    scopus 로고
    • L. D. Landau and E. M. Lifshitz, Quantum Mechanics (Pergamon, Oxford, 1977), 3rd ed., p. 73.
  • 14
    • 84927409184 scopus 로고    scopus 로고
    • We consider only the ground (unperturbed) state of the quantum well. A second, higher-energy state for electrons exists for QW thickness > 70 ~ A ang. However, the confinement energy of this state, 120 meV at 90-Å thickness, is large enough so that it does not affect lateral levels originating from the ground QW state with m < 11;
  • 16
    • 84927409183 scopus 로고    scopus 로고
    • This selection rule holds only approximately in our case since the lateral potential wells for different types of carriers have different shapes.
  • 17
    • 84927409182 scopus 로고    scopus 로고
    • H. Kressel and J. K. Butler, Semiconductor Lasers and Heterojunction LED's (Academic, New York, 1977), Chap. 3, p. 91.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.