Modeling of the Distributed Gate RC Effect in MOSFET's

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 8, Issue 12, 1989, Pages 1365-1367

  Kim, Lee Sup ^a   Dutton, Robert W ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS, DISTRIBUTED PARAMETER; SEMICONDUCTOR DEVICES, MOSFET;

DELAY EFFECTS; DISTRIBUTED-PARAMETER CIRCUITS; MOSFET DEVICES;

TRANSISTORS, FIELD EFFECT;

EID: 0024882544     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.44517     Document Type: Article

References (2)

1. H. C. Lin, Y. F. Arzoumanian, J. L. Halsor, M. N. Giuliano and H. F. Benz, “Effect of silicon gate resistance on the frequency response of MOS transistors,” IEEE Trans. Electron Devices, vol. ED-22, pp. 255-264, May 1975.
2. T. Sakurai and T. Iizuka, “Gate electrode RC delay effects in VLSI's,” IEEE Trans. Electron Devices, vol. ED-32, pp. 310-314, Feb. 1985.