-
1
-
-
0009556404
-
CODECS: A mixed-level circuit and device simulator
-
Memo. UCB/ERL M88/71, Electronics Research Lab, Univ. California, Berkeley, Nov.
-
K. Mayaram, “CODECS: A mixed-level circuit and device simulator,” Memo. UCB/ERL M88/71, Electronics Research Lab, Univ. California, Berkeley, Nov. 1988.
-
(1988)
-
-
Mayaram, K.1
-
2
-
-
0024627109
-
A non-quasi-static MOSFET model for SPICE-transient analysis
-
Mar.
-
H. J. Park, P. K. Ko, and C. Hu, “A non-quasi-static MOSFET model for SPICE-transient analysis,” IEEE Trans. Electron Devices, vol. 36, pp. 561–576, Mar. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 561-576
-
-
Park, H.J.1
Ko, P.K.2
Hu, C.3
-
3
-
-
0017981668
-
Potential of MOS technologies for analog integrated circuits
-
June
-
D. A. Hodges, P. R. Gray, and R. W. Brodersen, “Potential of MOS technologies for analog integrated circuits,” IEEE J. Solid State Circuits, vol. SC-13, pp. 285–294, June 1978.
-
(1978)
IEEE J. Solid State Circuits
, vol.SC-13
, pp. 285-294
-
-
Hodges, D.A.1
Gray, P.R.2
Brodersen, R.W.3
-
4
-
-
0015025121
-
MOS models and circuit simulation
-
J. E. Meyer, “MOS models and circuit simulation,” RCA Rev., vol. 32, pp. 42–63, 1971.
-
(1971)
RCA Rev.
, vol.32
, pp. 42-63
-
-
Meyer, J.E.1
-
5
-
-
63349106220
-
Transient analysis of MOS transistors
-
Apr.
-
S. Y. Oh, D. E. Ward, and R. W. Dutton, “Transient analysis of MOS transistors,” IEEE J. Solid State Circuits, vol. SC-15, pp. 636–643, Apr. 1980.
-
(1980)
IEEE J. Solid State Circuits
, vol.SC-15
, pp. 636-643
-
-
Oh, S.Y.1
Ward, D.E.2
Dutton, R.W.3
-
6
-
-
0018027059
-
A charge-oriented model for MOS transistor capacitances
-
June
-
D. E. Ward and R. W. Dutton, “A charge-oriented model for MOS transistor capacitances,” IEEE J. Solid State Circuits, vol. SC-13, pp. 703–708, June 1978.
-
(1978)
IEEE J. Solid State Circuits
, vol.SC-13
, pp. 703-708
-
-
Ward, D.E.1
Dutton, R.W.2
-
7
-
-
0020191751
-
SPICE modelling for small geometry MOSFET circuits
-
P. Yang and P. K. Chatterjee, “SPICE modelling for small geometry MOSFET circuits,” IEEE Trans. Computer-Aided Design, vol. CAD-1, pp. 169–182, 1982.
-
(1982)
IEEE Trans. Computer-Aided Design
, vol.CAD-1
, pp. 169-182
-
-
Yang, P.1
Chatterjee, P.K.2
-
8
-
-
0021615356
-
High-frequency CMOS continuous time filters
-
Dec.
-
H. Khorramabadi and P. R. Gray, “High-frequency CMOS continuous time filters,” IEEE J. Solid State Circuits, vol. SC-19, pp. 939–948, Dec. 1984.
-
(1984)
IEEE J. Solid State Circuits
, vol.SC-19
, pp. 939-948
-
-
Khorramabadi, H.1
Gray, P.R.2
-
9
-
-
0020780738
-
Limitations of quasi-static capacitance models for the MOS transistor
-
J. J. Paulos and D. A. Antoniadis, “Limitations of quasi-static capacitance models for the MOS transistor,” IEEE Electron Device Lett., vol. EDL-4, pp. 221–224, 1983.
-
(1983)
IEEE Electron Device Lett
, vol.EDL-4
, pp. 221-224
-
-
Paulos, J.J.1
Antoniadis, D.A.2
-
10
-
-
0022152815
-
A small signal dc-to-high frequency nonquasistatic models for the four-terminal MOSFET valid in all regions of operation
-
ED-32, Nov.
-
M. Bagheri and Y. P. Tsividis, “A small signal dc-to-high frequency nonquasistatic models for the four-terminal MOSFET valid in all regions of operation,” IEEE Trans. Electron Devices, ED-32, pp. 2383–2391, Nov. 1985.
-
(1985)
IEEE Trans. Electron Devices
, pp. 2383-2391
-
-
Bagheri, M.1
Tsividis, Y.P.2
-
11
-
-
0000573172
-
A CAD-oriented non-quasistatic approach for the transient analysis of MOS IC's
-
C. Turchetti, P. Mancini, and G. Masetti, “A CAD-oriented non-quasistatic approach for the transient analysis of MOS IC's,” IEEE J. Solid State Circuits, vol. SC-21, pp. 827–836, 1986.
-
(1986)
IEEE J. Solid State Circuit
, vol.SC-21
, pp. 827-836
-
-
Turchetti, C.1
Mancini, P.2
Masetti, G.3
-
12
-
-
0023292182
-
A non-quasi-static analysis of the transient behavior of the long channel MOST valid in all regions of operation
-
Feb.
-
P. Mancini, C. Turchetti, and G. Masetti, “A non-quasi-static analysis of the transient behavior of the long channel MOST valid in all regions of operation,” IEEE Trans. Electron Devices, vol. 34, pp. 325–334, Feb. 1987.
-
(1987)
IEEE Trans. Electron Device
, vol.34
, pp. 325-334
-
-
Mancini, P.1
Turchetti, C.2
Masetti, G.3
-
13
-
-
0008813556
-
Significance of the channel-charge partition in the transient MOSFET model
-
Oct.
-
J. G. Fossum, H. Jeong, and S. Veeraraghavan, “Significance of the channel-charge partition in the transient MOSFET model,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1621–1623, Oct. 1986.
-
(1986)
IEEE Trans. Electron Device
, vol.ED-33
, pp. 1621-1623
-
-
Fossum, J.G.1
Jeong, H.2
Veeraraghavan, S.3
-
14
-
-
0023531738
-
On the channel charge division in MOSFET modeling
-
Nov.
-
M. F. Sevat, “On the channel charge division in MOSFET modeling,” Tech. Dig. ICCAD, pp. 208–210, Nov. 1987.
-
(1987)
Tech. Dig. ICCAD
, pp. 208-210
-
-
Sevat, M.F.1
-
15
-
-
0006398682
-
High frequency characteristics of the insulated gate field effect transistor
-
Sept.
-
J. R. Burns, “High frequency characteristics of the insulated gate field effect transistor,” RCA Rev., pp. 385–418, Sept. 1967.
-
(1967)
RCA Rev.
, pp. 385-418
-
-
Burns, J.R.1
-
16
-
-
0014628480
-
High frequency network properties of MOS transistors including the substrate resistivity effects
-
Dec.
-
M. B. Das, “High frequency network properties of MOS transistors including the substrate resistivity effects,” IEEE Trans. Electron Devices, vol. ED-16, pp. 1049–1069, Dec. 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 1049-1069
-
-
Das, M.B.1
-
17
-
-
84939769577
-
-
D. H. Treleaven, and F. N. Trofimenkoff, “MOS FET equivalent circuit at pinch-off,” Proc. IEEE, vol. 54, pp. 1223–1224, Sept. 1966.
-
(1966)
Proc. IEEE
, vol.54
, pp. 1223-1224
-
-
Treleaven, D.H.1
Trofimenkoff, F.N.2
-
18
-
-
0025464945
-
Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave charactersitics of MOD-FET's
-
July
-
P. Roblin, S. C. Kang, and H. Morkoc, “Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave charactersitics of MOD-FET's,” IEEE Trans. Electron Devices, vol. 37, pp. 1608–1622, July 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 1608-1622
-
-
Roblin, P.1
Kang, S.C.2
Morkoc, H.3
-
19
-
-
84941504175
-
Vth and beyond
-
presented at the Workshop on Device Modeling for VLSI, Burlingame, CA, March
-
H. C. Poon, “Vth and beyond,” presented at the Workshop on Device Modeling for VLSI, Burlingame, CA, March 1979.
-
(1979)
-
-
Poon, H.C.1
-
20
-
-
84942395327
-
3.1 current modeling for MOSFET
-
Part 1, A. E. Ruehli, Editor. New York: North Holland
-
H. I. Hanafi, “3.1 current modeling for MOSFET,” Circuit Analysis, Simulation and Design, Part 1, A. E. Ruehli, Editor. New York: North Holland, 1986, pp. 98–99.
-
(1986)
Circuit Analysis, Simulation and Design
, pp. 98-99
-
-
Hanafi, H.I.1
-
21
-
-
0342970939
-
MOS transistor modeling and characterization for circuit simulation
-
Electronics Research Lab., Univ. of California, Berkeley, Memo. UCB/ERL M85/85
-
B. J. Sheu, “MOS transistor modeling and characterization for circuit simulation,” Electronics Research Lab., Univ. of California, Berkeley, Memo. UCB/ERL M85/85, Oct. 1985.
-
(1985)
-
-
Sheu, B.J.1
-
23
-
-
0023566391
-
A non-quasistatic MOSFET model for SPICE
-
Dec.
-
H. J. Park, P. K. Ko, C. Hu, “A non-quasistatic MOSFET model for SPICE,” in Int. Electron Devices Meeting 87 Tech. Dig., Dec. 1987, pp. 652–655.
-
(1987)
Int. Electron Devices Meeting 87 Tech. Dig.
, pp. 652-655
-
-
Park, H.J.1
Ko, P.K.2
Hu, C.3
-
24
-
-
0004637565
-
Charge sheet and non-quasistatic MOSFET models for SPICE
-
Ph.D. dissertation, Electron. Res. Lab., Dept, of EECS, University of California, Berkeley, Memo. UCB/ERL M89/20, Feb.
-
H. J. Park, “Charge sheet and non-quasistatic MOSFET models for SPICE,” Ph.D. dissertation, Electron. Res. Lab., Dept, of EECS, University of California, Berkeley, Memo. UCB/ERL M89/20, Feb. 1989.
-
(1989)
-
-
Park, H.J.1
-
25
-
-
0023401686
-
BSIM: Berkeley short channel IGFET model for MOS transistors
-
Aug.
-
B. J. Sheu, D. L. Scharfetter, P. K. Ko, and M. C. Jeng, “BSIM: Berkeley short channel IGFET model for MOS transistors,” IEEE J. Solid-State Circuits, vol. 22, pp. 558–566, Aug. 1987.
-
(1987)
IEEE J. Solid-State Circuits
, vol.22
, pp. 558-566
-
-
Sheu, B.J.1
Scharfetter, D.L.2
Ko, P.K.3
Jeng, M.C.4
-
26
-
-
0020268431
-
MOS operational amplifier design—A tutorial overview
-
Dec.
-
P. R. Gray and R. G. Meyer, “MOS operational amplifier design—A tutorial overview,” IEEE J. Solid-State Circuits, vol. SC-17, pp. 969–982, Dec. 1982.
-
(1982)
IEEE J. Solid-State Circuits
, vol.SC-17
, pp. 969-982
-
-
Gray, P.R.1
Meyer, R.G.2
-
27
-
-
0026128884
-
A charge sheet capacitance model for short channel MOSFET's for SPICE
-
Mar.
-
H. J. Park, P. K. Ko, and C. Hu, “A charge sheet capacitance model for short channel MOSFET's for SPICE,” IEEE Trans. Computer-Aided Design, vol. 10, pp. 376–389, Mar. 1991.
-
(1991)
IEEE Trans. Computer-Aided Design
, vol.10
, pp. 376-389
-
-
Park, H.J.1
Ko, P.K.2
Hu, C.3
-
28
-
-
0026156001
-
A charge-conserving non-quasi-static (NQS) MOSFET model for SPICE transient analysis
-
May
-
H. J. Park, P. K. Ko, and C. Hu, “A charge-conserving non-quasi-static (NQS) MOSFET model for SPICE transient analysis,” IEEE Trans. Computer-Aided Design, vol. 10, pp. 629–642, May 1991.
-
(1991)
IEEE Trans. Computer-Aided Desig
, vol.10
, pp. 629-642
-
-
Park, H.J.1
Ko, P.K.2
Hu, C.3
-
29
-
-
0043211490
-
The simulation of MOS integrated circuits using SPICE 2
-
Electron. Res. Lab., Dept, of EECS, Univ. California, Berkeley, Memo. UCB/ERL M80/7, Oct.
-
A. Vladimirescu and S. Liu, “The simulation of MOS integrated circuits using SPICE2,” Electron. Res. Lab., Dept, of EECS, Univ. California, Berkeley, Memo. UCB/ERL M80/7, Oct. 1980.
-
(1980)
-
-
Vladimirescu, A.1
Liu, S.2
-
30
-
-
0004298261
-
SPICE 3B1 User's Guide
-
Electron. Res. Lab., Univ. California, Berkeley, Nov.
-
T. L. Quarles, A. R. Newton, D. O. Pederson, and A. Sangiovanni-Vincentelli, “SPICE 3B1 User's Guide,” Electron. Res. Lab., Univ. California, Berkeley, Nov. 1987.
-
(1987)
-
-
Quarles, T.L.1
Newton, A.R.2
Pederson, D.O.3
Sangiovanni-Vincentelli, A.4
-
31
-
-
84942395328
-
SPICE3 implementation of a non-quasi-static MOSFET model with level-2 dc model
-
Electron. Res. Lab., Univ. California, Berkeley, Memo. UCB-ERL M89/70, June
-
H. J. Park, P. K. Ko, and C. Hu, “SPICE3 implementation of a non-quasi-static MOSFET model with level-2 dc model,” Electron. Res. Lab., Univ. California, Berkeley, Memo. UCB-ERL M89/70, June 1989.
-
(1989)
-
-
Park, H.J.1
Ko, P.K.2
Hu, C.3
|