Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from `coldfet' measurements

IEEE Microwave and Guided Wave Letters

Volumn 3, Issue 12, 1993, Pages 453-454

  White, Paul M ^a   Healy, Richard M ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CAPACITANCE MEASUREMENT; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; PARAMETER ESTIMATION;

COLDFET MEASUREMENTS; PARASITIC CAPACITANCES; Y PARAMETERS; ZERO DRAIN PINCHED OFF CONDITIONS;

FIELD EFFECT TRANSISTORS;

EID: 0027837667     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.251398     Document Type: Article

References (5)

1. G. Dambrine A. Cappy F. Heliodore E. Playez A new method for determining the FET small-signal equivalent circuit IEEE Trans. Microwave Theory Tech. MTT-36 1151 1159 July 1988
2. M. Berroth R. Bosch Broad-band determination of the FET small-signal equivalent circuit IEEE Trans. Microwave Theory Tech. MTT-38 891 895 July 1990
3. M. Berroth R. Bosch High-frequency equivalent circuit of GaAs FET's for large-signal applications IEEE Trans. Microwave Theory Tech. MTT-39 224 229 Feb. 1991
4. W. R. Curtice R. L. Camisa Self-consistent GaAs FET models for amplifier design and device diagnostics IEEE Trans. Microwave Theory Tech. MTT-32 1573 1578 Dec. 1984
5. F. Diamant M. Laviron Measurement of the extrinsic series elements of a microwave MESFET under zero current condition Proc. 12th European Microwave Conf. 451 456 Proc. 12th European Microwave Conf. 1982