12 GHz Low-Noise MMIC Amplifier Designed with a Noise Model that Scales with MODFET Size and Bias

IEEE Transactions on Microwave Theory and Techniques

Volumn 41, Issue 12, 1993, Pages 2311-2316

  Hughes, Brian ^a   Perdomo, Julio ^a   Kondoh, Hiroshi ^a  

^a Hewlett Packard Microwave Instruments Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CORRELATION METHODS; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; LUMPED PARAMETER NETWORKS; MATHEMATICAL MODELS; MONOLITHIC INTEGRATED CIRCUITS; RESISTORS; SIGNAL TO NOISE RATIO; THERMAL NOISE;

FIELD EFFECT TRANSISTOR NOISE MODEL; LOW NOISE AMPLIFIERS; MODFET; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT;

MICROWAVE AMPLIFIERS;

EID: 0027846865     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.260722     Document Type: Article

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