MBE-grown strained AlInGaAs/AlGaAs vertical cavity lasers with low threshold currents and high output power

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1996, Pages 388-389

  Ko, Jack ^a   Thibeault, Brian J ^a   Akulova, Yuliya ^a   Hegblom, Eric R ^a   Young, Bruce D ^a   Coldren, Larry A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTINUOUS WAVE LASERS; CURRENT DENSITY; ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; OXIDATION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH); THRESHOLD CURRENTS; VERTICAL CAVITY LASERS (VCLS);

SEMICONDUCTOR LASERS;

EID: 0030379596     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)