Oxidised GaAs QW vertical-cavity lasers with 40% power conversion efficiency

Electronics Letters

Volumn 32, Issue 19, 1996, Pages 1784-1786

  Weigl, B ^a   Reiner, G ^a   Grabherr, M ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

Gallium arsenide; Vertical cavity surface emitting lasers

Indexed keywords

BERYLLIUM; ELECTRIC CURRENTS; ENERGY CONVERSION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

SIDEMODE SUPPRESSION; SOLID SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

LASER RESONATORS;

EID: 3242829009     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961216     Document Type: Article

References (12)

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