Lattice-matched GaSb/AlGaAsSb double-heterostructure diode lasers grown by MOVPE

Electronics Letters

Volumn 32, Issue 19, 1996, Pages 1779-1781

  Wang, C A ^a   Choi, H K ^a  

^a NONE

Author keywords

Semiconductor junction lasers; Vapour phase epitaxial growth

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

DOUBLE CRYSTAL X RAY DIFFRACTION; NOMARSKI CONTRAST MICROSCOPY; PULSED THRESHOLD CURRENT DENSITY; SEMICONDUCTOR JUNCTION LASERS; TRIETHYLGALLIUM; TRIMETHYLANTIMONY; TRITERTIARYBUTYLALUMINUM;

SEMICONDUCTOR LASERS;

EID: 0030246734     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961208     Document Type: Article

References (10)

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6. CHIDLEY, E.T.R., HAYWOOD, S.K., MALLARD, R.E., MASON, N.J., NICHOLAS, R.J., WALKER, P.J., and WARBURTON, R.J.: 'GaSb heteros tructures grown by MOVPE', J. Cryst. Growth, 1988, 93, pp. 70-78
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8. WANG, C.A., FINN, M.C., SALIM, S., JENSEN, K.F., and JONES, A.C.: 'Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb', Appl. Phys. Lett., 1995, 67, (10), pp. 1384-1386
9. WANG, C.A., JENSEN, K.F., JONES, A.C., and CHOI. H.K.: 'n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapour phase epitaxy', Appl. Phys. Lett., 1996, 68, (3), pp. 400-402
10. CHOI, H.K, and EGLASH, S.J.: 'Room temperature cw operation at 2.2μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy', Appl. Phys. Lett., 1991, 59, (10), pp. 1165-1166