Unilateral Gain of Heterojunction Bipolar Transistors at Microwave Frequencies

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2288-2294

  Prasad, Sheila ^a   Lee, Wai ^b   Fonstad, Clifton G ^b  

^a NORTHEASTERN UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES--MICROWAVE;

EQUIVALENT CIRCUIT MODELS; H PARAMETERS; NEGATIVE OUTPUT CONDUCTANCE; PARASITICS; UNILATERAL GAIN;

TRANSISTORS, BIPOLAR;

EID: 0024122579     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8804     Document Type: Article

References (14)

1. H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, p. 13, 1982.
2. P. M. Asbeck, M. F. Chang, K.-C. Wang, D. L. Miller, G. J. Sullivan, N. H. Sheng, E. Sovero, and J. A. Higgins, “Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits,” IEEE Trans. Electron Devices, vol. ED-34, p. 1462, 1987.
3. K. Nagata, O. Nakajima, Y. Yamauchi, T. Nittono, H. Ito, and T. Ishibashi, “Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer,” IEEE Trans. Electron Devices, vol. 35, p. 2, 1988.
4. C. G. Fonstad, “Consideration of the relative frequency performance of inverted heterojunction n-p-n transistors,” IEEE Electron Device Lett., vol. EDL-5, p. 99, 1984.
5. W. Lee, N. Dagli, S. Prasad, and C. G. Fonstad, “Microwave modeling of emitter-down heterojunction bipolar transistors,” in Proc. Bipolar Circuits Technol., Meeting (New York), p. 164, 1987.
6. N. Dagli, W. Lee, S. Prasad, and C. G. Fonstad, “High-frequency characteristics of inverted-mode heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-8, p. 472, 1987.
7. J. M. Early, “P-N-I-P and N-P-I-N junction transistor triodes,” Bell Syst. Tech. J., vol. 33, p. 517, 1954.
8. D. E. Thomas and J. L. Moll, “Junction transistor short-circuit current gain and phase determination,” Proc. IRE, vol. 46, p. 1177, 1958.
9. R. P. Abraham, “Transistor behavior at high frequencies,” IRE Trans. Electron Devices, vol. ED-7, p. 59, 1960.
10. S. R. Arnold and R. L. Pritchett, “Base contact resistance studies in new and improved transmission-type transistors,” Bell Labs. Rep. 20, Contract DA 36-039 AMC-02227(E), June 30, 1965.
11. S. J. Mason, “Power gain in feedback amplifier,” IRE Trans. Circuit Theory, vol. CT-1, p. 20, 1954.
12. 0.48As abrupt double-heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-7, p. 683, 1986.
13. R. Spence, Linear Active Networks. London: Wiley-Interscience, 1970, p. 111.
14. M. B. Steer and R. J. Trew, “High-frequency limits of millimeterwave wave transistors,” IEEE Electron Device Lett., vol. EDL-7, p. 640, 1986.