Analytical Parameter Extraction of the HBT Equivalent Circuit with T-Like Topology from Measured S-Parameters

IEEE Transactions on Microwave Theory and Techniques

Volumn 43, Issue 3, 1995, Pages 493-498

  Schaper, Ulrich ^a   Holzapfl, Birgit ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; FREQUENCIES; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

ANALYTICAL PARAMETER EXTRACTION; EMITTER SERIES RESISTANCE; EXTRINSIC COLLECTOR CAPACITANCE; FREQUENCY DEPENDENCIES; INTERCONNECT METALLIZATION; INTRINSIC EQUIVALENT CIRCUIT ELEMENTS; ON WAFER MEASUREMENT; SMALL SIGNAL EQUIVALENT CIRCUIT PARAMETERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029272049     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.372091     Document Type: Article

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