Evaluation of the factors determining hbt high-frequency performance by direct analysis of s-parameter data

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 12, 1992, Pages 2367-2373

  Pehlke, David R ^a   Pavlidis, Dimitris ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939361544     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.179903     Document Type: Article

References (7)

1. R. L. Vaitkus, “Uncertainty in the values of GaAs MESFET equivalent circuit elements extracted from two-port scattering parameters,” in Proc. IEEE/Cornell Conf. on High-Speed Semiconductor Devices and Circuits, 1983, pp. 301–308.
2. D. Costa, W. U. Liu, and J. S. Harris, “Direct extraction of the Al GaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit,” IEEE Trans. Electron Devices, vol. 38, pp. 2018–2024, Sept. 1991.
3. H. Cho and D. E. Burke, “A simple model for distributed base impedance with ac verification using S-parameter measurements,” in IEEE 1990 Bipolar Circuits and Technology Meeting, 5.3, pp. 106–109.
4. D. Pehlke and D. Pavlidis, “Direct calculation of the HBT equivalent circuit from measured S-parameters,” in 1992 IEEE MTT-S Int. Microwave Symp. Dig., Albuquerque, NM, June 1–5.
5. D. Pehlke and D. Pavlidis, “Critical issues in process technology for high-speed self-aligned GaAs/AlGaAs heterojunction bipolar transistors,” in Dig. GaAs Manufacturing and Technology Conf. Reno, NV, April, 1991, pp. 93–96.
6. A. P. Laser and D. Pulfrey, “Reconciliation of methods for estimating f MAX for microwave heterojunction transistors,” IEEE Trans. Electron Devices, vol. 38, pp. 1685–1692, Aug. 1991.
7. R. L. Pritchard, The Electrical Characteristics of Transistors. New York McGraw-Hill, 1967, p. 233.