1 W Ku-Band AlGaAs/GaAs Power HBT's with 72% Peak Power-Added Efficiency

IEEE Transactions on Electron Devices

Volumn 42, Issue 11, 1995, Pages 1890-1896

  Shimura, Teruyuki ^a   Sakai, Masayuki ^a   Izumi, Shigekazu ^a   Nakano, Hirofumi ^a   Matsuoka, Hiroshi ^a   Inoue, Akira ^a   Udomoto, Junichi ^a   Kosaki, Katsuya ^a   Kuragaki, Takeshi ^a   Takano, Hirozo ^a   Sonoda, Takuji ^a   Takamiya, Saburo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT DISTRIBUTION; ELECTRODES; EPITAXIAL GROWTH; HEAT SINKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SOLID STATE DEVICES;

DUMMY EMITTER TECHNIQUE; OPTIMUM EMITTER BALLASTING RESISTOR; PEAK POWER ADDED EFFICIENCY; PLATED HEAT SINK STRUCTURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029409734     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.469393     Document Type: Article

References (14)

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