230 watt S-band SiGe HBT

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 673-676

  Potyraj, P A ^a   Petrosky, K J ^a   Hobart, K D ^a   Kub, F J ^a   Thompson, P E ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; MICROWAVE DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

POWER GAIN; SATURATED POWER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029695323     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)