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IEEE Electron Device Letters

Volumn 16, Issue 5, 1995, Pages 205-207

Si/Si1-xGex Heterojunction Bipolar Transistors with High Breakdown Voltage

(5) Hobart, K D a Kub, F J a Papanicoloau, N A a Kruppa, W a Thompson, P E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; MICROWAVE MEASUREMENT; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOUBLE MESA PROCESS; HIGH BREAKDOWN VOLTAGE; LOW BASE RESISTANCE; LOW PARASITIC PAD CAPACITANCE; MICRO AIRBRIDGE INTERCONNECTIONS; SINGLE WAFER PROCESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029308411 PISSN: 07413106 EISSN: 15580563 Source Type: Journal
DOI: 10.1109/55.382241 Document Type: Article

Times cited : (15)

References (8)

1
- 0027877999
- Optimization of SiGe HBT technology for high speed analog and mixed-signal applications
- Washington, DC
- D. L. Harame, J. M. C. Stork, B. S. Meyerson, K. Y.-J. Hsu, J. Cotte, K. A. Jenkins, J. D. Cressler, P. Restle, E. F. Crabbe, S. Subbanna, T. E. Tice, B. W. Scharf, and J. A. Yasaitis, “Optimization of SiGe HBT technology for high speed analog and mixed-signal applications,” IEDM Tech. Dig., Washington, DC, 1993, p. 71.
- (1993) IEDM Tech. Dig. , pp. 71.
- Harame, D.L.¹ Stork, J.M.C.² Meyerson, B.S.³ Hsu, K.Y.-J.⁴ Cotte, J.⁵ Jenkins, K.A.⁶ Cressler, J.D.⁷ Restle, P.⁸ Crabbe, E.F.⁹ Subbanna, S.¹⁰ Tice, T.E.¹¹ Scharf, B.W.¹² Yasaitis, J.A.¹³

2
- 0026851318
- MBE-grown Si/SiGe HBTs with high β, fT, and fmax
- A. Gruhle, H. Kibbel, U. Konig, U. Erben, and E. Kasper, “MBE-grown Si/SiGe HBTs with high β, f T, and f max, ” IEEE Electron Device Lett., vol. 13, p. 206, 1992.
- , vol.13 , pp. 206
- Gruhle, A.¹ Kibbel, H.² Konig, U.³ Erben, U.⁴ Kasper, E.⁵

3
- 0027910996
- Application of micro-airbridge isolation in high speed HBT fabrication
- S. Tadayon, G. Metze, A. Cornfeld, K. Pande, H. Huang. and B. Tadayon, “Application of micro-airbridge isolation in high speed HBT fabrication.” Elec. Lett., vol. 29, p, 26, 1993.
- (1993) Elec. Lett. , vol.29
- Tadayon, S.¹ Metze, G.² Cornfeld, A.³ Pande, K.⁴ Huang, H.⁵ Tadayon, B.⁶

4
- 0003879668
- New York: John Wiley
- A. S. Grove, Physics and Technology of Semiconductor Devices. New York: John Wiley, 1967.
- (1967) Physics and Technology of Semiconductor Devices
- Grove, A.S.¹

5
- 0004005306
- New York: John Wiley
- S. M. Sze, Physics of Semiconductor Devices. New York: John Wiley, 1981.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

6
- 0016986883
- A general method for predicting the avalanche breakdown voltage of negative bevelled devices
- M. S. Adler and V. A. K. Temple, “A general method for predicting the avalanche breakdown voltage of negative bevelled devices,” IEEE Trans. Electron Devices, vol. 23, p. 956, 1976.
- (1976) IEEE Trans. Electron Devices , vol.23 , pp. 956
- Adler, M.S.¹ Temple, V.A.K.²

7
- 84864384696
- Physics and applications of GexSi1-x/Si strained-layer heterostructures
- R. People, “Physics and applications of Ge x Si 1- x /Si strained-layer heterostructures,” IEEE J. Quantum Electron., vol. QE-22, p. 1696, 1986.
- (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1696
- People, R.¹

8
- 0004176147
- New York: McGraw-Hill
- D. J. Roulston, Bipolar Semiconductor Devices. New York: McGraw-Hill, 1990.
- (1990) Bipolar Semiconductor Devices
- Roulston, D.J.¹

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