Photoelectric emission and conductance studies on fully fabricated PHEMTs

Solid State Electronics

Volumn 38, Issue 9, 1995, Pages 1615-1618

  Schuermeyer, Fritz ^a   Cerny, Charles ^a   Loehr, J P ^a   Sherriff, R E ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

bands; PHEMT; photoelectric; photoemission

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ENERGY GAP; GATES (TRANSISTOR); PHOTOCONDUCTIVITY; PHOTOEMISSION; SEMICONDUCTOR DEVICE MODELS;

BANDGAP ENERGIES; PEAK PHOTOCURRENT MAGNITUDE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMTS); SELF CONSISTENT SCHRODINGER POISSON SOLUTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029378458     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00060-7     Document Type: Article

References (13)

1. Far-IR laser scattering studies of density fluctations in tokamak fusion plasma
2. Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors
3. Room temperature photoluminescence from modulation doped AlGaAs/InGaAs/GaAs quantum wells
4. Characterization and improvement of the layer uniformity for large-area quantum well device arrays grown in an Intevac/Varian Gen II molecular beam epitaxy system
5. Quantitative characterization of modulation-doped strained quantum wells through line-shape analysis of room-temperature photoluminescence spectra
6. Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence
7. Photoluminescence and Photoreflectance Study of Electronic Structure in Pseudomorphic n-AlGaAs/InGaAs/GaAs