A Novel Schottky /2-DEG Diode for Millimeter- and Submillimeter-Wave Multiplier Applications

IEEE Electron Device Letters

Volumn 13, Issue 1, 1992, Pages 11-13

  Peatman, W C B ^a   Crowe, Thomas W ^a   Shur, Michael ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONIC CIRCUITS, FREQUENCY MULTIPLYING; ELECTRONS - MODULATION; VARACTORS;

FERMI VELOCITY; SCHOTTKY/2-DEG DIODE; TWO-DIMENSIONAL ELECTRON GAS STRUCTURE;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0026622164     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144935     Document Type: Article

References (7)

1. N. Erickson, “High efficiency submillimeter frequency multipliers,” presented at the 1990 IEEE MTT-S Int. Microwave Symp., Dallas, TX, May 1990.
2. P. Zimmermann, private communication, Mar./May 1990.
3. W.C.B. Peatman, T.W. Crowe, and M. Shur, “Design and fabrication of heterostructure varactor diodes for millimeter and SubMillimeter wave multiplier applications,” in Proc. IEEE/Cornell Conf. Advanced Concepts High Speed Semic. Dev. Circuits (Ithaca, NY), 1991.
4. S.G. Petrosyan and A. Ya. Shik, “Contact phenomena in a two-dimensional electron gas,” Sov. Phys. Semicond., vol. 23, pp. 696–697, June 1989.
5. B. Gelmont, M. Shur, and C. Moglestue, “Theory of junction between two-dimensional electron gas and p-type semiconductor,” submitted to IEEE Trans. Electron Devices, 1991.
6. P. Penfield and R. Rafuse, Varactor Applications. Cambridge, MA: MIT Press, 1962, p. 86.
7. M. Shur, GaAs Devices and Circuits. New York: Plenum, 1987, p. 520.