Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Materials Chemistry and Physics

Volumn 45, Issue 2, 1996, Pages 155-158

  Kim, S T ^a   Kim, J W ^a   Jung, S W ^a   Shin, J S ^a   Ahn, S T ^b   Lee, W J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Electrical properties; Ferroelectric thin films; PZT thin films

Indexed keywords

ELECTRIC CHARGE; ELECTRON CYCLOTRON RESONANCE; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; LEAKAGE CURRENTS; PLASMAS; SUBSTRATES; TITANIUM COMPOUNDS; VAPOR DEPOSITION; ZIRCONIUM COMPOUNDS;

CHARGE STORAGE DENSITY; FERROELECTRIC THIN FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PZT THIN FILMS;

THIN FILMS;

EID: 0030216839     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(96)80094-0     Document Type: Article

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