Gigabit-scale DRAM capacitor technology with high dielectric constant thin films by a novel conformal deposition technique

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 153-154

  Hayashi, S ^a   Huffman, M ^a   Azuma, M ^a   Shimada, Y ^a   Otsuki, T ^a   Kano, G ^a   McMillan, L D ^a   Paz de Araujo, C A ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOLS; BARIUM COMPOUNDS; CAPACITANCE; CAPACITORS; COMPOSITION; DEPOSITION; ELECTRIC PROPERTIES; FABRICATION; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; TECHNOLOGY;

COMPOSITION CONTROLLABILITY; CONFORMAL DEPOSITION; DYNAMIC RANDOM ACCESS MEMORY; LEAKAGE CURRENT DENSITY; STACKED CELL STRUCTURES; STORAGE CAPACITORS; WAFER;

DIELECTRIC FILMS;

EID: 0028594651     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)