메뉴 건너뛰기




Volumn 37, Issue 1, 1990, Pages 121-127

A Laser-Recrystallization Technique For Silicon-TFT Integrated Circuits on Quartz Substrates and Its Application to Small-Size Monolithic Active-Matrix LCD’s

Author keywords

[No Author keywords available]

Indexed keywords

DISPLAY DEVICES--LIQUID CRYSTAL; INTEGRATED CIRCUITS, MONOLITHIC--MANUFACTURE; TRANSISTORS--THIN FILMS;

EID: 0025206744     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43808     Document Type: Article
Times cited : (21)

References (15)
  • 1
    • 0020272579 scopus 로고
    • MOS transistors in beam-recrystallized polysilicon
    • T. I. Kamins, “MOS transistors in beam-recrystallized polysilicon,” in IEDM Tech. Dig., 1982, pp. 420–423.
    • (1982) IEDM Tech. Dig. , pp. 420-423
    • Kamins, T.I.1
  • 2
    • 0023604096 scopus 로고
    • Three dimentional IC for high performance image signal processor
    • T. Nishimura et al., “Three dimentional IC for high performance image signal processor,” in IEDM Tech. Dig., 1987, pp. 111–114.
    • (1987) IEDM Tech. Dig. , pp. 111-114
    • Nishimura, T.1
  • 4
    • 0023438606 scopus 로고
    • Hot-electron effects in silicon-on-insulator n-channel MOSFET’s
    • J. P. Colinge, “Hot-electron effects in silicon-on-insulator n-channel MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-34, pp. 2173-2177, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 2173-2177
    • Colinge, J.P.1
  • 6
    • 84919174649 scopus 로고
    • Polycrystalline silicon liquid crystal displays with high speed scanners
    • R. Stewart et al., “Polycrystalline silicon liquid crystal displays with high speed scanners,” in SID Int. Symp. Dig. Tech. Papers, 1988, pp. 404–407.
    • (1988) SID Int. Symp. Dig. Tech. Papers , pp. 404-407
    • Stewart, R.1
  • 7
    • 0023995648 scopus 로고
    • A high-resolution active-matrix using p-channel SOI TFT’s
    • A. Mimura, et al., “A high-resolution active-matrix using p-channel SOI TFT’s,” IEEE Trans. Electron Devices, vol. 35, pp. 418–425, 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 418-425
    • Mimura, A.1
  • 8
    • 0021618037 scopus 로고
    • A 240 360 × element active-matrix LCD with integrated gate-bus drivers using poly-Si TFTs
    • Y. Oana, “A 240 360 × element active-matrix LCD with integrated gate-bus drivers using poly-Si TFTs,” inSID Int. Symp. Dig. Tech. Papers, 1984, pp. 312–315.
    • (1984) SID Int. Symp. Dig. Tech. Papers , pp. 312-315
    • Oana, Y.1
  • 9
    • 0022703088 scopus 로고
    • A super thin film transistor in advanced poly Si Films
    • T. Ohshima, T. Noguchi, and H. Hayashi, “A super thin film transistor in advanced poly Si Films,” Jpn. J. Appl. Phys. Lett., pp. 291—293, 1986.
    • (1986) Jpn. J. Appl. Phys. Lett. , pp. 291-293
    • Ohshima, T.1    Noguchi, T.2    Hayashi, H.3
  • 10
    • 84941511858 scopus 로고
    • Recrystallization mechanism for solid phase growth of polysilicon films on quartz substrate
    • A. Nakamura et. al., “Recrystallization mechanism for solid phase growth of polysilicon films on quartz substrate,” in Proc. 20th Conf. Solid State Devices Mater., 1988. pp. 189–192.
    • (1988) Proc. 20th Conf. Solid State Devices Mater. , pp. 189-192
    • Nakamura, A.1
  • 11
    • 0020297712 scopus 로고
    • Zone-melting recrystallization of Si films with a moveable-strip-heater oven
    • M. W. Geis, H. I. Smith, J. C. C. Fan, D. J. Smith, and R. W. Mountain, “Zone-melting recrystallization of Si films with a moveable-strip-heater oven,” J. Electrochem. Soc., vol. 129, pp. 2812–2818, 1982.
    • (1982) J. Electrochem. Soc. , vol.129 , pp. 2812-2818
    • Geis, M.W.1    Smith, H.I.2    Fan, J.C.C.3    Smith, D.J.4    Mountain, R.W.5
  • 12
    • 0021427713 scopus 로고
    • RF recrystallization of polycrystalline silicon on fused silica for MOSFET devices
    • Y. Kobayashi, A. Fukami, and T. Suzuki, “RF recrystallization of polycrystalline silicon on fused silica for MOSFET devices,” J. Electrochem. Soc., vol. 131, pp. 1188–1194, 1982.
    • (1982) J. Electrochem. Soc. , vol.131 , pp. 1188-1194
    • Kobayashi, Y.1    Fukami, A.2    Suzuki, T.3
  • 14
    • 0009773673 scopus 로고
    • Growth of single-crystal silicon islands on bulk fused silica by CO2 laser annealing
    • W. G. Hawkins, J. G. Black, and C. H. Griffiths, “Growth of single-crystal silicon islands on bulk fused silica by CO2 laser annealing,” Appl. Phys. Lett., vol 40, pp. 319–321, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 319-321
    • Hawkins, W.G.1    Black, J.G.2    Griffiths, C.H.3
  • 15
    • 0020250680 scopus 로고
    • Single-crystal silicon transistors in laser-crystallized thin films on bulk glass
    • N. M. Johnson, D. K. Biegelsen, H. C. Tuan, M. D. Moyer, and L. E. Fennel, “Single-crystal silicon transistors in laser-crystallized thin films on bulk glass,” IEEE Electron Device Lett. vol. EDL-3, pp. 369–372. 1982.
    • (1982) IEEE Electron Device Lett , vol.EDL-3 , pp. 369-372
    • Johnson, N.M.1    Biegelsen, D.K.2    Tuan, H.C.3    Moyer, M.D.4    Fennel, L.E.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.