Hydrogenation of Transistors Fabricated in Polycrystalline-Silicon Films

IEEE Electron Device Letters

Volumn 1, Issue 8, 1980, Pages 159-161

  Kamins, T I ^a   Marcoux, ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

EID: 0019051719     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25272     Document Type: Article

References (10)

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2. T. I. Kamins, “Field-effects in polycrystalline-silicon films,” Solid-State Electron., vol. 15, pp. 789–799, 1972.
3. A. Gat, L. Gerzberg, J. F. Gibbons, T. J. Magee, J. Peng, and J. D. Hong, “cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties,” Appl. Phys. Lett., vol. 33, pp. 775–778, 15 Oct. 1978.
4. T. I. Kamins, K. F. Lee, J. F. Gibbons, and K. C. Saraswat, “A monolithic integrated circuit fabricated in laser-annealed polysilicon,” IEEE Trans. Electron Devices, vol. ED-27, pp. 290–293, January 1980.
5. D. Kaplan, N. Sol, G. Velasco, and P. A. Thomas, “Hydrogenation of evaporated amorphous silicon films by plasma treatment,” Appl. Phys. Lett., vol. 33, pp. 440–442, 1 September 1978.
6. C. H. Seager and D. S. Ginley, “Passivation of grain boundaries in polycrystalline silicon,” Appl. Phys. Lett., vol. 34, pp. 337–340, 1 March 1979.
7. T. Makino and H. Nakamura, “The influence of plasma annealing on electrical properties of polycrystalline Si,” Appl. Phys. Lett., vol. 35, pp. 551–552 1 October 1979.
8. D. R. Campbell, “Enhanced conductivity in plasma-hydrogenated polysilicon films,” Appl. Phys. Lett., vol. 36, pp. 604–606, 1 April 1980.
9. C. H. Seager, private communication.
10. H. Matsumura, Y. Nakagome, and S. Furukawa, “A heat-resisting - new amorphous silicon,” Appl. Phys. Lett., vol. 36, pp. 439–440, 15 March 1980.