Inlaid cu interconnects employing ti-si-n barrier metal for ULSI applications

IEICE Transactions on Electronics

Volumn E79-C, Issue 4, 1996, Pages 568-572

  Iijima, Tadashi ^a   Shimooka, Yoshiaki ^a   Suguro, Kyoichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Barrier; Cu; Interconnect; Ti si n

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DIFFUSION IN SOLIDS; LEAKAGE CURRENTS; METALLIC FILMS; TENSILE STRENGTH; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TITANIUM ALLOYS; X RAY DIFFRACTION;

BARRIER METAL; DIFFUSION BARRIER; INLAID COPPER INTERCONNECTS;

ULSI CIRCUITS;

EID: 0030123345     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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