-
1
-
-
0018000998
-
Diffusion barriers in thin films
-
M.-A. Nicolet, “Diffusion barriers in thin films,” Thin Solid Films, vol. 52, p. 415, 1978.
-
(1978)
Thin Solid Films
, vol.52
, pp. 415
-
-
Nicolet, M.-A.1
-
2
-
-
0020193963
-
General aspects of barrier layers for very-large-scale integration applications I: Concepts
-
P. S. Ho, “General aspects of barrier layers for very-large-scale integration applications I: Concepts,” Thin Solid Films, vol. 96, p. 301, 1982.
-
(1982)
Thin Solid Films
, vol.96
, pp. 301
-
-
Ho, P.S.1
-
3
-
-
0020194354
-
General aspects of barrier layers for very-large-scale integration applications II: Practice
-
R. S. Nowicki and M.-A. Nicolet, “General aspects of barrier layers for very-large-scale integration applications II: Practice,” Thin Solid Films, vol. 96, p. 317, 1982.
-
(1982)
Thin Solid Films
, vol.96
, pp. 317
-
-
Nowicki, R.S.1
Nicolet, M.-A.2
-
4
-
-
57849122054
-
Barrier layers: Principles and applications in microelectronics
-
M. Wittmer, “Barrier layers: Principles and applications in microelectronics,” J. Vac. Sci. Technol, vol. A2, p. 273, 1984.
-
(1984)
J. Vac. Sci. Technol.
, vol.A2
, pp. 273
-
-
Wittmer, M.1
-
5
-
-
0002633840
-
Diffusion barriers in semiconductor contact metallizations
-
D. Gupta and P. S. Ho, Eds. Park Ridge, NJ: Noyes Publication
-
H. P. Kattelus and M.-A. Nicolet, “Diffusion barriers in semiconductor contact metallizations,” in Diffusion Phenomena in Thin Films and Microelectronic Materials, D. Gupta and P. S. Ho, Eds. Park Ridge, NJ: Noyes Publication, 1988, pp. 432–498.
-
(1988)
Diffusion Phenomena in Thin Films and Microelectronic Materials
, pp. 432-498
-
-
Kattelus, H.P.1
Nicolet, M.-A.2
-
6
-
-
0024735644
-
Selective electroless copper for VLSI interconnection
-
P.-J. Pan and C. H. Ting, “Selective electroless copper for VLSI interconnection,” IEEE Electron Device Lett., vol. 10, no. 9, p. 423, 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, Issue.9
, pp. 423
-
-
Pan, P.-J.1
Ting, C.H.2
-
7
-
-
0020910932
-
Amorphous metallic alloys in semiconductor contact metallizations
-
M.-A. Nicolet, I. Suni, and M. Finetti, “Amorphous metallic alloys in semiconductor contact metallizations,” Solid State Technol., vol. 26, p. 129, 1983.
-
(1983)
Solid State Technol.
, vol.26
, pp. 129
-
-
Nicolet, M.-A.1
Suni, I.2
Finetti, M.3
-
8
-
-
0020133518
-
Amorphous metallizations for high-temperature semiconductor device applications
-
J. D. Wiley, J. H. Perepezko, J. E. Nordman, and K.-J. Gus, “Amorphous metallizations for high-temperature semiconductor device applications,” IEEE Trans. Ind. Electron., vol. IE-29, p. 154, 1982.
-
(1982)
IEEE Trans. Ind. Electron
, vol.IE-29
, pp. 154
-
-
Wiley, J.D.1
Perepezko, J.H.2
Nordman, J.E.3
Gus, K.-J.4
-
9
-
-
0022104020
-
Amorphous Ni-N-W films as diffusion barrier between Al and Si
-
M. F. Zhu, F. C. T. So, and M.-A. Nicolet, “Amorphous Ni-N-W films as diffusion barrier between Al and Si,” Thin Solid Films, vol. 130, p. 245, 1985.
-
(1985)
Thin Solid Films
, vol.130
, pp. 245
-
-
Zhu, M.F.1
So, F.C.T.2
Nicolet, M.-A.3
-
10
-
-
0006344263
-
Interactions of amorphous alloys with Si substrates
-
L. S. Hung, F. W. Saris, S. Q. Wang, and J. W. Mayer, “Interactions of amorphous alloys with Si substrates,” J. Appl. Phys., vol. 59, p. 2416, 1986.
-
(1986)
J. Appl. Phys.
, vol.59
, pp. 2416
-
-
Hung, L.S.1
Saris, F.W.2
Wang, S.Q.3
Mayer, J.W.4
-
11
-
-
0346119449
-
Tungsten-rhenium alloys as diffusion barriers between aluminum and silicon
-
S. E. Homstrom, T. Liu, O. Thomas, P. M. Frye, and J. M. E. Harper, “Tungsten-rhenium alloys as diffusion barriers between aluminum and silicon,” J. Vac. Sci. Technol. A, vol. 6, p. 1650, 1988.
-
(1988)
J. Vac. Sci. Technol. A
, vol.6
, pp. 1650
-
-
Homstrom, S.E.1
Liu, T.2
Thomas, O.3
Frye, P.M.4
Harper, J.M.E.5
-
12
-
-
36549098171
-
Phase separations of amorphous COW films during oxidation and reactions with Si and AI
-
S. Q. Wang and J. W. Mayer, “Phase separations of amorphous COW films during oxidation and reactions with Si and AI,” J. Appl. Phys., vol. 65, p. 1957, 1989.
-
(1989)
J. Appl. Phys.
, vol.65
, pp. 1957
-
-
Wang, S.Q.1
Mayer, J.W.2
-
13
-
-
84955039864
-
Amorphous Ta-Si-N thin-film alloys as diffusion barrier in Al/Si metallizations
-
E. Kolawa, J. M. Molarius, C. W. Nieh, and M.-A. Nicolet, “Amorphous Ta-Si-N thin-film alloys as diffusion barrier in Al/Si metallizations,” J. Vac. Sci. Technol. A, vol. 8, p. 3006, 1990.
-
(1990)
J. Vac. Sci. Technol. A
, vol.8
, pp. 3006
-
-
Kolawa, E.1
Molarius, J.M.2
Nieh, C.W.3
Nicolet, M.-A.4
-
14
-
-
0001439811
-
A comparison between aluminum and copper interactions with high-temperature oxide and nitride diffusion barriers
-
A. Charai, S. E. Homstrom, O. Thomas, P. M. Fryer, and J. M. E. Harper, “A comparison between aluminum and copper interactions with high-temperature oxide and nitride diffusion barriers,” J. Vac. Sci. Technol. A, vol. 7, p. 784, 1989.
-
(1989)
J. Vac. Sci. Technol. A
, vol.7
, pp. 784
-
-
Charai, A.1
Homstrom, S.E.2
Thomas, O.3
Fryer, P.M.4
Harper, J.M.E.5
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