Ti-Si-N Diffusion Barriers between Silicon and Copper

IEEE Electron Device Letters

Volumn 15, Issue 8, 1994, Pages 298-300

  Reid, J S ^a   Sun, X ^a   Kolawa, E ^a   Nicolet, M A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COPPER; CRYSTAL MICROSTRUCTURE; DEPOSITION; DIFFUSION; GRAIN SIZE AND SHAPE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION BARRIERS; SHALLOW JUNCTION DIODES; SILICON SUBSTRATES;

THIN FILMS;

EID: 0028485831     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.296222     Document Type: Article

References (23)

1. N. Chueng H. von Seefeld and M.-A. Nicolet, “Titanium nitride as a diffusion barrier in metallization schemes,” in Proceedings of the Symposium on Thin Film Interfaces and Interactions, vol. 80--82, J. E. E. Baglin and J. M. Poate, Eds. Princeton, NJ: The Electrochemical Society, p. 323, 1980.
2. I. Suni, M. Blomberg, and J. Saarilahti, “Performance of titanium nitride diffusion barriers in aluminum titanium metallization schemes for integrated circuits,” J. Vac. Sci. Technol. A, vol. 3, p. 2233, 1985.
3. N. Fumimura, N. Nishida, T. Ito, and Y. Nakayama, “Effects of texture in the titanium layer on solid-state reactions for Al/Ti/Si and Al/Tin/Ti/Si systems,” Materials Sci. Eng. A., vol. 108, pp. 153–157, 1989.
4. A. Armigliato and G. Valdre, “Analytical electron-microscopy of Al/TiN contacts on silicon for applications to very large-scale integrated dev ices, J. Appl. Phys., vol. 61, no. 1, pp. 390--396, 1987.
5. N. Kumar, J. T. Mc Ginn, K. Pourrezaei, B. Lee, and E. C. Douglas, “Transmission electron-microscopy studies of brown and golden titanium nitride thin-films as diffusion-barriers in very large-scale integrated-circuits,” J. Vac. Sci. A, vol. 6, no. 3, pp. 1602–1608, 1988.
6. A. Sherman, “Growth and properties of LPCVD titanium nitride as a diffusion barrier for silicon device technology,” J. Electrochem. Soc., vol. 137, no. 6, pp. 1892–1897, 1990.
7. S. Q. Wang, I. Raaijmakers, B. J. Burrow, S. Suthar, S. Redkar, and K. B. Kim, “Reactively sputtered TiN as a diffusion barrier between Cu and Si,” J. Appl. Phys., vol. 68. no. 10, pp. 5176–5187. 1990.
8. J.O. Olowolafe, J. A. Lie, J. W. Mayer, and E. G. Colgan, “Effects of oxygen in TiN x on the diffusion of Cu in Cu/Tin/Al and Cu/Tinx/Si Structures,” Appl. Phys. Lett., vol. 58, no. 5, pp. 469–471, 1991.
9. M. K. Hibbs, J.-E. Sundgren, B. E. Jacobson, and B.-O. Johansson, “The microstructure of reactively sputtered Ti-N films,” Thin Solid Films, vol. 107, pp. 149–157, 1983.
10. S. Kanamori, “Investigations of reactively sputtered TiN films for diffusion barriers,” Thin Solid Films, vol. 136, pp. 195–214, 1986.
11. H. Z. Wu, T. C. Chou, A. Mishra, D. R. Anderson, J. K. Lampet, and S. C. Gujrathi, “Characterization of titanium nitride thin films,” Thin Solid Films, vol. 191, pp. 55–67, 1991.
12. A. Sherman, “Growth and properties of low-pressure chemical-vapor-deposited TIN for ultra large-scale integration,” Jpn. J. Appl. Phys., vol. 30, no. 12B, pp. 3553–3557, 1991.
13. N. Yuokoyama, K. Hinode, and Y. Homma, “LPCVD Titanium Nitride for ULSI,” 1. Electrochem. Soc., vol. 138, no. 1, pp. 190–195, 1991.
14. S. R. Kurtz and R. G. Gordon, “Chemical vapor-deposition of titanium nitride at low-temperatures,” Thin Solid Films, vol. 140, no. 2, pp. 277–290, 1986.
15. K. Ishihara, K. Yamazaki, and H. Hamada, “Characterization of CVD TiN films prepared with metalorganic source,” Jpn. J. Appl. Phys., vol. 29, no. 10, pp. 2103–2105, 1990.
16. J. S. Reid, E. Kolawa, R. P. Ruiz, and M.-A. Nicolet, “Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for (Si)/Cu metallizations,” Thin Solid Films, vol. 236, no. 1–2, pp. 319–324, 1993.
17. E. Kolawa, J. S. Chen, J. S. Reid, P. J. Pokela, and M.-A. Nicolet, “Tantalum-based diffusion barriers in Si/Cu VLSI metallizations,” J. Appl. Phys., vol. 70, no. 3, pp. 1369–1373, 1991.
18. R. Beyers, R. Sinclair, and M. E. Thomas, “Phase equilibria in thin-film metallizations,” J. Vac. Sci. Technol. B, vol. 2, no. 4, pp. 781-784,1984.
19. J. M. E. Harper, S. Berg. C. Nender, I. V. Katardjiev, and S. Motakef, “Enhanced sputtering of one species in the processing of multielement thin films,” 1. Vac. Sci. Technol. A, vol. 10, no. 4, pp. 1765-1771,1992.
20. B. D. Culity, Elements of x-ray diffraction, 2nd ed. Reading, MA: Addison-Wesey Publishing Company, Inc., 1978, p. 102.
21. P. Rogi and J. C. Schuster, Phase diagrams of ternary boron nitride and silicon nitride systems. Materials Park, OH: ASM International, pp. 198–202.
22. W. Posadowski, “Electric properties of Ti-Si-N thin cermet films deposited in a triode sputtering system with a hot cathode,” Thin Solid Films, vol. 162. p. 111, 1988.
23. H. P. Kattelus and M.-A. Nicolet, “Diffusion barriers in semiconductor contact metallizations,” in Diffusion Phenomena in Thin Films and Microelectronic Materials, D. Gupta and P. S. Ho, Eds. Park Ridge, NJ: Noyes Publication, 1988, pp. 432–498.