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Journal of Applied Physics

Volumn 53, Issue 2, 1982, Pages 1154-1157

The impedance of the near ballistic electron transport device in n-GaAs

(2) Lee, Johnson a Vassell, M O a

a VERIZON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR DEVICES;

EID: 0020087534 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.329866 Document Type: Article

Times cited : (2)

References (11)

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2
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7
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- Lee, J.¹

8
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- Ferry, D.K.¹ Barker, J.R.²

9
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- Champlin, K.S.¹ Armstrong, D.B.² Gunderson, P.D.³

10
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- (1977) Electron. Lett , vol.13 , pp. 156
- Rees, H.¹ Sanghera, G.S.² Warriner, R.A.³

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- Pozela, J.¹ Reklaitis, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.