High-Frequency Effects of Ballistic Electron Transport In Semiconductors

IEEE Electron Device Letters

Volumn 1, Issue 7, 1980, Pages 137-139

  Frensley, W R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING, GALLIUM COMPOUNDS;

EID: 0019041859     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1980.25261     Document Type: Article

References (7)

1. J.R. Barker and D.K. ferry, “On the Physics and Modeling of Small Semiconductor Devices I,” to be published in Solid State Electronics.
2. M.S. Shur and L.F. Eastman, “Ballistic Transport in Semiconductor at Low Temperatures for Low-Power High-Speed Logic,” IEEE Trans. Electron Devices, Vol. ED-26, pp. 1677-1668, 1979.
3. R.P. Feynman, R.B. Leighton, and M. Sands, The Feynman Lectures on Physics. Reading, MA: Addison-Wesley, Vol. II, Ch. 32, 1964.
4. J.I. Pankove, Optical Processes in Semiconductors. New York: Dover p. 92, 1971.
5. K.S. Champlin, D.B. Armstrong, and P.D. Gunderson, “Charge Carrier Inertia in Semiconductors,” Proc. IEEE Vol. 52, pp. 677-85, 1964.
6. H. Morkoc and L.F. Eastman, “Purity of GaAs Grown by LPE in a Graphite Boat,” J. Crystal Growth, Vol. 36, pp. 109-14, 1976.
7. G.H. Glover, “Study of Electron Energy Relaxation Times in GaAs and InP,” J. Appl. Phys. 44, 1295 (1973).