Structural and electric-field-induced anisotropy in zinc-blende bulk semiconductors and quantum wells - The bonding orbital approach

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1378-1387

  Khurgin, J B ^a   Voisin, P ^b  

^a Johns Hopkins University   (United States)

^b ECOLE NORMALE SUPÉRIEURE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343114826     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/009     Document Type: Article

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