Morphology and Current-Voltage Characteristics of Nanostructured Pentacene Thin Films Probed by Atomic Force Microscopy

Journal of Nanoscience and Nanotechnology

Volumn 1, Issue 3, 2001, Pages 317-321

  Zorba, Serkan ^a   Le, Quoc Toan ^a   Watkins, Neil J ^a   Yan, Li ^a   Gao, Yongli ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

Atomic force microscopy; CP AFM; Current voltage characteristics; Growth modes; Morphology; Nanostructured pentacene film

Indexed keywords

DISULFIDE; GOLD; MOLYBDENUM; MOLYBDENUM DISULFIDE; POLYCYCLIC AROMATIC HYDROCARBON; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; COMPARATIVE STUDY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EVALUATION; ISOLATION AND PURIFICATION; MACROMOLECULE; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY; SYNTHESIS;

CRYSTALLIZATION; DISULFIDES; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; GOLD; MACROMOLECULAR SUBSTANCES; MICROSCOPY, ATOMIC FORCE; MOLECULAR CONFORMATION; MOLYBDENUM; NANOTECHNOLOGY; POLYCYCLIC HYDROCARBONS, AROMATIC; SEMICONDUCTORS; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 0012543726     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2001.050     Document Type: Article

References (14)

1. G. Binnig, C. F. Quate, and C. Gerber, Phys. Rev. Lett. 56, 930 (1986).
2. J. H. Schon, S. Berg, Ch. Kloc, and B. Batlogg, Science 287, 1022 (2000).
3. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Electron Device Lett. 18(3), 87 (1997).
4. M. Sokolowski and E. Umbach, Vacuum Solutions July/August, 15 (1999).
5. S. Zorba, N. J. Watkins, L. Yan, and Y. Gao, Mater. Res. Soc. Symp. Proc. 660, JJ10.3 (2001).
6. T. W. Kelley, E. L. Granstrom, and C. D. Frisbie, Adv. Mater. 11, 261 (1999).
7. H. Dai, E. W. Wong, and C. M. Lieber, Science 272, 523 (1996); D. Klein and P. McEuen, Appl. Phys. Lett. 66, 2478 (1995); M. J. Loiacono, E. L. Granstrom, and C. D. Frisbie, J. Phys. Chem. 102, 1679 (1998); T. W. Kelley, E. L. Granstrom, and C. D. Frisbie, Adv. Mater. 11, 261 (1999); T. W. Kelley and C. D. Frisbie, J. Vac. Sci. Technol. B 18, 632 (2000).
8. H. Dai, E. W. Wong, and C. M. Lieber, Science 272, 523 (1996); D. Klein and P. McEuen, Appl. Phys. Lett. 66, 2478 (1995); M. J. Loiacono, E. L. Granstrom, and C. D. Frisbie, J. Phys. Chem. 102, 1679 (1998); T. W. Kelley, E. L. Granstrom, and C. D. Frisbie, Adv. Mater. 11, 261 (1999); T. W. Kelley and C. D. Frisbie, J. Vac. Sci. Technol. B 18, 632 (2000).
9. H. Dai, E. W. Wong, and C. M. Lieber, Science 272, 523 (1996); D. Klein and P. McEuen, Appl. Phys. Lett. 66, 2478 (1995); M. J. Loiacono, E. L. Granstrom, and C. D. Frisbie, J. Phys. Chem. 102, 1679 (1998); T. W. Kelley, E. L. Granstrom, and C. D. Frisbie, Adv. Mater. 11, 261 (1999); T. W. Kelley and C. D. Frisbie, J. Vac. Sci. Technol. B 18, 632 (2000).
10. H. Dai, E. W. Wong, and C. M. Lieber, Science 272, 523 (1996); D. Klein and P. McEuen, Appl. Phys. Lett. 66, 2478 (1995); M. J. Loiacono, E. L. Granstrom, and C. D. Frisbie, J. Phys. Chem. 102, 1679 (1998); T. W. Kelley, E. L. Granstrom, and C. D. Frisbie, Adv. Mater. 11, 261 (1999); T. W. Kelley and C. D. Frisbie, J. Vac. Sci. Technol. B 18, 632 (2000).
11. H. Dai, E. W. Wong, and C. M. Lieber, Science 272, 523 (1996); D. Klein and P. McEuen, Appl. Phys. Lett. 66, 2478 (1995); M. J. Loiacono, E. L. Granstrom, and C. D. Frisbie, J. Phys. Chem. 102, 1679 (1998); T. W. Kelley, E. L. Granstrom, and C. D. Frisbie, Adv. Mater. 11, 261 (1999); T. W. Kelley and C. D. Frisbie, J. Vac. Sci. Technol. B 18, 632 (2000).
12. E. A. Silinsh and V. Capek, Organic Molecular Crystals, AIP Press, New York (1994).
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York (1981).
14. D. P. Halliday, J. M. Eggleston, P. N. Adams, I. A. Pentland, and A. P. Monkman, Synth. Metals 85, 1245 (1997).