High-efficiency ku-band oscillators

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 10 PART 2, 1998, Pages 1566-1571

  McSpadden, James O ^a  

^a Texas AandM University   (United States)

Author keywords

HEMT; High efficiency transmitters; Oscillators; Phemt

Indexed keywords

EID: 0011151392     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.721166     Document Type: Article

References (21)

1. H.L. Krauss, C.W. Bostain, and F. H. Raab, Solid State Radio Engineering. New York: Wiley, 1980.
2. J.L.B. Walker, High-Power GaAs FET Amplifiers. Norwood, MA: Artech House, 1993.
3. D.M. Snider, "A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifier," IEEE Trans. Electron Devices, vol. ED-14, pp. 851-857, Dec. 1967.
4. L.J. Kushner, "Output performance of idealized microwave power amplifiers," Microwave J., vol. 32, no. 10, pp. 103-116, Oct. 1989.
5. "Estimating power amplifier large signal gain," Microwave J., vol. 33, no. 6, pp. 87-102, June 1990.
6. M. Vehovec, L. Houselander, and R. Spence, "On oscillator design for maximum power," IEEE Trans. Circuit Theory, vol. CT-15, pp. 281-283, Sept. 1968.
7. K.L. Kotzebue and W.J. Parrish, "The use of large-signal s-parameters in microwave oscillator design," in Proc. Int. Symp. Circuits Syst., 1975, pp. 487-490.
8. K.M. Johnson, "Large signal GaAs MESFET oscillator design," IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 217-227, Mar. 1979.
9. R.J. Gilmore and F.J. Rosenbaum, "An analytic approach to optimum oscillator design using s-parameters," IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 633-639, Aug. 1983.
10. V.M.T. Lam, P. C. L. Yip, and C. R. Poole, "Microwave oscillator design with power prediction," Electron. Lett., vol. 27, no. 17, pp. 1574-1575, Aug. 1991.
11. B.K. Kormanyos and G.M. Rebeiz, "Oscillator design for maximum added power," IEEE Microwave Guided Wave Lett., vol. 4, pp. 205-207, June 1994; also, "correction," IEEE Microwave Guided Wave Lett., vol. 5. p. 93, Mar. 1995.
12. M. Maeda, K. Kimura, and H. Kodera, "Design and performance of Xband oscillators with GaAs schottky-gate field-effect transistors," IEEE Trans. Microwave Theory Tech., vol. MTT-23, pp. 661-667, Aug. 1975.
13. E.W. Bryerton, W.A. Shiroma, and Z. B. Popovic, "A 5-GHz highefficiency class-E oscillator," IEEE Microwave Guided Wave Lett., vol. 6. pp. 441-43, Dec. 1996.
14. P.C. Wade, "Novel F.E.T. power oscillator," Electron. Lett., vol. 14, no. 20, pp. 672-672, Sept. 1978.
15. H.Q. Tserng, H.M. Macksey, and V. Sokolov, "Performance of GaAs M.E.S.F.E.T. oscillators in the frequency range 8-25 GHz," Electron. Lett., vol. 13, no. 3, pp. 85-86, Feb. 1977.
16. E.B.L. Choo, J. A. C. Stewart, and V. F. Fusco, "Computeraided design of nonlinear optimum output power MESFET oscillator," Microwave Opt. Technol. Lett., vol. 1, no. 8, pp. 277-281, Oct. 1988.
17. C. Rauscher, "Large-signal technique for designing single-frequency and voltage-controlled GaAs FET oscillators," IEEE Trans. Microwave Theory Tech., vol. MTT-29, pp. 293-304, Apr. 1981.
18. D.H. Evans, "High-efficiency Ka- and Ku-band MESFET oscillators," Electron. Lett., vol. 21, no. 6, pp. 254-255, Mar. 1985.
19. J.L.J. Martin and F. J. O. Gonález, "Accurate linear oscillator analysis and design," Microwave J., vol. 39, no. 6, pp. 22-37, June 1996.
20. A.S. Khanna, "Three-port 5-parameters ease GaAs FET designing," Microwaves RF, vol. 24, no. 11, pp. 81-84, Nov. 1985.
21. N.J. Rohrer, G.J. Valco, and K. B. Bhasin, "Hybrid high temperature superconductor/GaAs 10 GHz microwave oscillator: Temperature and bias effects," IEEE Trans. Microwave Theory Tech., vol. 41, pp. 1865-1871, Nov. 1993.