Performance of gaas M.E.S.F.E.T. oscillators in the frequency range 8-25 GHz

Electronics Letters

Volumn 13, Issue 3, 1977, Pages 85-86

  Tserng, H Q ^a   Macksey, H M ^a   Sokolov, V ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Microwave oscillators; Schottky gate field effect transistors; Solid state microwave circuits

Indexed keywords

TRANSISTORS, FIELD EFFECT;

MES FET;

OSCILLATORS, MICROWAVE;

EID: 0017765648     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19770057     Document Type: Article

References (6)

1. MAEDA, M., et al.: ‘Design and performance of X-band oscillators with GaAs Schottky-gate field-effect transistors’, IEEE Trans., MTT-23, pp. 661-667
2. PUCEL, R. A., et al.: ‘Experiments on integrated gallium-arsende f.e.t. oscillators at X-band’, Electron. Lett., 1975, 11, pp. 219-220
3. OMORI, M., and NISHIMOTO, C.: ‘Common-gate GaAs f.e.t. oscillator’, Electron. Lett., 1975, 11, pp. 369-371
4. SLAYMAKER, N. A., and TURNER, J. A.: ‘Alumina microstrip GaAs f.e.t. 11 GHz oscillator’, Electron. Lett., 1975, 11, pp. 300-301
5. ABE, H., et al.: ‘A high-power microwave GaAs f.e.t. oscillator’. ISSCC Digest of Technical Papers, 1976, pp. 164-165
6. MACKSEY, H. M., et al.: ‘GaAs power f.e.t.s with electron-beam-defined gates’, IEEE J. Solid-State Circuits (submitted for publication)