High-efficiency Ka- and Ku-band mesfet oscillators

Electronics Letters

Volumn 21, Issue 6, 1985, Pages 254-255

  Evans, D H ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Oscillators; Semiconductor devices and materials

Indexed keywords

TRANSISTORS, FIELD EFFECT - MICROWAVES;

MESFET OSCILLATORS;

OSCILLATORS, MICROWAVE;

EID: 0022027034     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19850181     Document Type: Article

References (4)

1. PUCEL, R. A., BERA, R., and MASSE, D.: “Experiments on integrated gallium-arsenide FET oscillators at X band”, Electron. Lett., 1975, 11, pp. 219-220
2. JOHNSON, R. M.: “Large-signal MESFET oscillator design”, IEEE Trans., 1979, MTT-27, pp. 217 227
3. SOHBY, M. I., andJASTREZEBSKI, A. K.: “Computer-aided design of microwave integrated circuits”. Proceedings of 14th European microwave conference, September 1984
4. VECHOVEC, L., HOUSELANDER, L., and SPENCE, R.: “An oscillator design for maximum power”, IEEE Trans., 1968, CT-15, pp. 281-283