THREE-PORT S-PARAMETERS EASE GaAs FET DESIGNING.

Microwaves and RF

Volumn , Issue 12, 1985, Pages 81-82,-84

  Khanna, Amarpal S ^a  

^a Avantek Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES - COMPUTER AIDED DESIGN;

GALLIUM ARSENIDE FET DESIGN; THREE-PORT S-PARAMETERS;

TRANSISTORS, FIELD EFFECT;

EID: 0022161480     PISSN: 07452883     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)