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Volumn 27, Issue 3, 1979, Pages 217-227

Large Signal GaAs Mesfet Oscillator Design

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS, ACTIVE - EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES, MIS; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

EID: 0018442719     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1979.1129597     Document Type: Article
Times cited : (78)

References (18)
  • 1
  • 2
    • 84939744422 scopus 로고
    • Investigation of nonlinear control systems—Part 4: Method of harmonic linearization
    • Washington, DC, U.S. Office of Naval Research Rep. Mar.
    • N. Minorski, “Investigation of nonlinear control systems—Part 4: Method of harmonic linearization,” Washington, DC, U.S. Office of Naval Research Rep., Mar. 1963.
    • (1963)
    • Minorski, N.1
  • 4
    • 0017500722 scopus 로고
    • A new technique for the direct measurement of Y-parameters at microwave frequencies
    • June
    • K. L. Kotzebue, “A new technique for the direct measurement of Y-parameters at microwave frequencies,” IEEE Trans. Instrum. Meas., vol. IM-26, pp. 119–123, June 1977.
    • (1977) IEEE Trans. Instrum. Meas. , vol.IM-26 , pp. 119-123
    • Kotzebue, K.L.1
  • 5
    • 0017093422 scopus 로고
    • A quasi-linear approach to the design of microwave transistor power amplifiers
    • Dec.
    • “A quasi-linear approach to the design of microwave transistor power amplifiers,” IEEE Trans. Microwave Theory Tech., vol. M1T-24, pp. 975–978, Dec. 1976.
    • (1976) IEEE Trans. Microwave Theory Tech. , vol.M1T-24 , pp. 975-978
  • 6
    • 0016509711 scopus 로고
    • Microwave-transistor power—Amplifier design by large-signal signal Y-parameters
    • May 29
    • “Microwave-transistor power—Amplifier design by large-signal signal Y-parameters,” Electron. Lett., vol. 11, no. 11, pp. 240–241, May 29, 1975.
    • (1975) Electron. Lett. , vol.11 , Issue.11 , pp. 240-241
  • 8
    • 0016543436 scopus 로고
    • Design and performance of X-band oscillators with GaAs Shottky-gate field-effect transistors
    • Aug.
    • M. Maeda, K. Kimura, and H. Kodera, “Design and performance of X-band oscillators with GaAs Shottky-gate field-effect transistors,” IEEE Trans. Microwave Theory Tech., vol. MTT-23 pp. 661–667, Aug. 1975.
    • (1975) IEEE Trans. Microwave Theory Tech. , vol.MTT-23 , pp. 661-667
    • Maeda, M.1    Kimura, K.2    Kodera, H.3
  • 9
    • 0017720031 scopus 로고
    • Design of GaAs MESFET oscillators using large signal S-parameters
    • Dec.
    • Y. Mitsui, M. Nakatani, and S. Mitsui, “Design of GaAs MESFET oscillators using large signal S-parameters,” IEEE Trans. Microwave Theory Tech., vol. MTT-25, pp. 981–984, Dec. 1977.
    • (1977) IEEE Trans. Microwave Theory Tech. , vol.MTT-25 , pp. 981-984
    • Mitsui, Y.1    Nakatani, M.2    Mitsui, S.3
  • 10
    • 0015771967 scopus 로고
    • Computerized optimization of microwave oscillators
    • paper 1514 Sept.
    • L. Besser, “Computerized optimization of microwave oscillators,” 1973 WESCON Tech. Papers, vol. 17, paper 1514, Sept. 1973.
    • (1973) 1973 WESCON Tech. Papers , vol.17
    • Besser, L.1
  • 12
    • 0016519565 scopus 로고
    • Try CAD for accurate GaAs MESFET models
    • June
    • G. Vendelin and M. Omori, “Try CAD for accurate GaAs MESFET models,” Microwaves, pp. 58–70, June 1975.
    • (1975) Microwaves , pp. 58-70
    • Vendelin, G.1    Omori, M.2
  • 13
    • 0016507470 scopus 로고
    • Experiments on integrated gallium-arsenide FET oscillators at X-band
    • R. A. Pucel, R. Bera, and D. Masse, “Experiments on integrated gallium-arsenide FET oscillators at X-band,” Electron. Lett., vol. 11, no. 10, pp. 219–220, May 15, 1975.
    • (1975) Electron. Lett. , Issue.10 , pp. 219-220
    • Pucel, R.A.1    Bera, R.2    Masse, D.3
  • 14
    • 0005742121 scopus 로고
    • Two port power flow analysis using generalized scattering parameters
    • May
    • G. E. Bodway, “Two port power flow analysis using generalized scattering parameters,” Microwave J., vol. 10, no. 6, pp. 61–69, May 1967.
    • (1967) Microwave J. , vol.10 , Issue.6 , pp. 61-69
    • Bodway, G.E.1
  • 15
    • 0016898142 scopus 로고
    • X-band performance of GaAs power F.E.T.'s
    • Jan. 22
    • H. M. Macksey, R. F. Adams, D. N. McQuiddy, and W. R. Wiseman, “ X -band performance of GaAs power F.E.T.'s,” Electron. Lett., vol. 12, no. 2, pp. 54–56, Jan. 22, 1976.
    • (1976) Electron. Lett. , vol.12 , Issue.2 , pp. 54-56
    • Macksey, H.M.1    Adams, R.F.2    McQuiddy, D.N.3    Wiseman, W.R.4
  • 16
    • 0016844147 scopus 로고
    • Circuit model for the GaAs M.E.S.F.E.T.valid to 12 GHz
    • Feb. 6
    • G. D. Vendelin and M. Omori, “Circuit model for the GaAs M.E.S.F.E.T. valid to 12 GHz,” Electron. Lett., vol. 11, no. 3, pp. 60–61, Feb. 6, 1975.
    • (1975) Electron. Lett. , vol.11 , Issue.3 , pp. 60-61
    • Vendelin, G.D.1    Omori, M.2
  • 17
    • 0015681099 scopus 로고
    • The effects of package parasitics on the stability of microwave negative resistance devices
    • Nov.
    • J. W. Monroe, “The effects of package parasitics on the stability of microwave negative resistance devices,” IEEE Trans. Microwave Theory Tech., vol. MTT-21, pp. 731–735, Nov. 1973.
    • (1973) IEEE Trans. Microwave Theory Tech. , vol.MTT-21 , pp. 731-735
    • Monroe, J.W.1
  • 18
    • 28144463548 scopus 로고
    • Maximally-efficient gain—A figure of merit for linear two ports
    • Sept. 16
    • K. L. Kotzebue, “Maximally-efficient gain—A figure of merit for linear two ports,” Electron. Lett., vol. 12, no. 19, pp. 490–491, Sept. 16, 1976.
    • (1976) Electron. Lett. , vol.12 , Issue.19 , pp. 490-491
    • Kotzebue, K.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.