Oscillator Design for Maximum Added Power

IEEE Microwave and Guided Wave Letters

Volumn 4, Issue 6, 1994, Pages 205-207

  Kormanyos, Brian K ^a   Rebeiz, Gabriel M ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE NETWORKS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; GAIN MEASUREMENT; MATHEMATICAL MODELS; MATRIX ALGEBRA; OPTIMIZATION;

EMBEDDING NETWORKS; MAXIMUM ADDED POWER; TWO PORT PARAMETERS;

OSCILLATORS (ELECTRONIC);

EID: 0028442925     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.294294     Document Type: Article

References (7)

1. K. L. Kotzebue and W. J. Parrish, “The use of large signal S-parameters in microwave oscillator design,” in Proc. Int. Microwave Symp. on Circuits and Systems, 1975.
2. M. Vehovec, L. Houselander, and R. Spence, “On oscillator design for maximum power,” IEEE Trans. Circuit Theory, 281–283, 1968.
3. V. M. T. Lam, P. C. L. Yip, and C. R. Poole, “Microwave oscillator design with power prediction,” Electron. Lett., vol. 27, no. 17, Aug. 15, 1991.
4. K. M. Johnson, “Large Signal GaAs MESFET Oscillator Design,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, no. 3, Mar. 1979.
5. K. L. Kotzebue, “Maximally efficient gain: a figure of merit for linear active 2-ports,” Electron. Lett., vol. 12, no. 19, Sept. 16, 1976.
6. D. H. Evans, “High-efficiency Ka- and Ku-band MESFET oscillators,” Electron. Lett., vol. 21, no. 6, pp. 254–255, 1985.
7. S. C. Cripps, “A theory for the prediction of GaAs FET load-pull power contours,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 221–223, 1983.