Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1366-1368

  Zhang, M H ^a   Huang, Q ^a   Zhang, Y F ^a   Zhou, J M ^a   Li, Q ^b   Xu, Z Y ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON ABSORPTION; ELECTRON DIFFRACTION; LIGHT REFRACTION; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

PHOTOREFRACTIVE EFFECTS; PUMP-PROBE TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032621170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124695     Document Type: Article

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