Continuous wave operation of 1.55 μm GaInAsP/InP laser with semiconductor/benzocyclobutene distributed Bragg reflector

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 11 A, 1999, Pages

  Madhan Raj, Mothi ^a   Saka, Yoshikazu ^a   Wiedmann, Jörg ^a   Yasumoto, Hideo ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC COMPOUNDS; CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; MIRRORS; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BENZOCYCLOBUTENE; DISTRIBUTED BRAGG REFLECTORS;

SEMICONDUCTOR LASERS;

EID: 0008134355     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1240     Document Type: Article

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