Characterization of electron emission from N-doped diamond using simultaneous field emission and photoemission technique

Applied Surface Science

Volumn 146, Issue 1, 1999, Pages 274-279

  Okano, K ^a   Yamada, T ^b   Sawabe, A ^b   Koizumi, S ^c   Matsuda, R ^d   Bandis, C ^d   Chang, W ^d   Pate, B B ^d  

^a INTERNATIONAL CHRISTIAN UNIVERSITY   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON EMISSION; ELECTRON ENERGY LOSS SPECTROSCOPY; FERMI LEVEL; NITROGEN; PHOTOEMISSION; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EMISSION;

DIAMOND FILMS;

EID: 0032625176     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00026-4     Document Type: Article

References (20)

1. Himpsel F.J., Knapp J.A., VanVechten J.A., Eastman D.E. Phys. Rev. B. 20:1979;624.
2. Pate B.B. Surf. Sci. 165:1986;83.
3. Geis M.W., Gregory A., Pate B.B. IEEE Trans. Electron Devices. 38:1991;619.
4. van der Weide J., Nemanich R.J. J. Vac. Sci. Technol. B. 10:1992;1940.
5. Eimori N., Mori Y., Hatta A., Itoh T., Hiraki A. Jpn. J. Appl. Phys. 33:1994;632.
6. Geis M.W., Efremow N.N., Woodhouse J.D., McAleese M.D., Marchywka M., Socker D.G., Hochedez J.F. IEEE Electron. Device Lett. 12:1991;456.
7. Wang C., Garcia A., Ingram D.C., Lake M., Kordesch M.E. Electron. Lett. 2:1991;1459.
8. Xu N.S., Latham R.V., Tzeng Y. Electon. Lett. 29:1993;1596.
9. J.C. Twichell, M.W. Geis, C.O. Bozler, D.D. Rathman, N.N. Efremow, K.E. Krohn, M.A. Hollis, R. Uttaro, T.M. Lyszczarz, M.E. Kordesch, K. Okano, presented at Diamond Films '93, Algarve, Portugal, 1993.
10. Okano K., Gleason K.K. Electron. Lett. 31:1995;74.
11. Geis M.W., Twichell J.C., Macaulay J., Okano K. Appl. Phys. Lett. 67:1995;1328.
12. Okano K., Koizumi S., Silva S.R.P., Amaratunga G.A.J. Nature. 381:1996;140.
13. Huang Z.H., Cutler P.H., Misokovsky N.M., Sullivan T.E. Appl. Phys. Lett. 65:1994;2562.
14. Huang Z.H., Cutler P.H., Misokovsky N.M., Sullivan T.E. J. Vac. Sci. Technol. B. 13:1995;526.
15. Geis M.W., Twichell J.C., Lyszczarz T.M. J. Vac. Sci. Technol. B. 14:1996;2060.
16. Amaratunga G.A.J., Silva S.R.P. Appl. Phys. Lett. 68:1996;2529.
17. Schlesser R., McClure M.T., Choi W.B., Hren J.J., Sitar Z. Appl. Phys. Lett. 70:1997;1596.
18. Okano K., Naruki H., Akiba Y., Kurosu T., Iida M., Nakamura T. Jpn. J. Appl. Phys. 27:1988;L173.
19. Okano K., Kiyota H., Iwasaki T., Nakamura Y., Akiba Y., Kurosu T., Iida M., Nakamura T. Appl. Phys. A. 51:1990;344.
20. Bandis C., Pate B.B. Appl. Phys. Lett. 69:1996;366.