Design optimization of radiation-hard, double-sided, double-metal, AC-coupled silicon sensors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 436, Issue 1-2, 1999, Pages 272-280

  Ohsugi, T ^a   Iwata, Y ^a   Ohmoto, T ^a   Handa, T ^a   Fujita, K ^a   Kitabayashi, H ^a   Sato, K ^a   Satoh, S ^a   Takashima, R ^b   Nakano, I ^c   Yamamoto, K ^d   Yamamura, K ^d  

^a HIROSHIMA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY OF EDUCATION   (Japan)

^c OKAYAMA UNIVERSITY   (Japan)

^d CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; MICROSTRIP DEVICES; OPTIMIZATION; RADIATION HARDENING; READOUT SYSTEMS;

SILICON MICROSTRIP DETECTOR; VERTEX DETECTORS;

SILICON SENSORS;

EID: 0005423704     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00633-6     Document Type: Article

References (14)

1. Technical Design Report of CDF-II Detector, November 1996.
2. Ziock H.et al. Nucl. Instr. and Meth. A. 342:1994;96.
3. Fretwurst E.et al. Nucl. Instr. and Meth. A. 342:1994;119.
4. Ohsugi T.et al. Nucl. Instr. and Meth. A. 342:1994;22.
5. Ohsugi T.et al. Nucl. Instr. and Meth. A. 383:1996;116.
6. Barberis E.et al. Nucl. Instr. and Meth. A. 342:1994;90.
7. Ma T.M., Dressendorfer P.V. Ionization Radiation Effects in MOS Device and Circuit. 1989;15 Wiley, New York.
8. Ohsugi T.et al. Nucl. Instr. and Meth. A. 383:1996;166.
9. Tamura N.et al. Nucl. Instr. and Meth. A. 342:1994;131.
10. Gill K.et al. (RD20 collaboration). Nucl. Phys. B. 44:1994;475.
11. Hopman P.I.et al. Nucl. Instr. and Meth. A. 383:1996;98.
12. Iwata Y.et al. IEEE Nucl. Sci. Trans. NS-45(3):1998;303.
13. Unno Y.et al. IEEE Nucl. Sci. Trans. NS-45(3):1998;401.
14. Miyata H.et al. Nucl. Instr. and Meth. A. 383:1996;110.