New gas chemistries for high-performance and chargeless dielectric etching

Materials Science in Semiconductor Processing

Volumn 2, Issue 3, 1999, Pages 203-208

  Samukawa, Seiji ^a   Mukai, Tomonori ^a   Noguchi, Ko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005416291     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00017-7     Document Type: Article

References (18)

1. Kazumi H, Tago K. Jpn J Appl Phys 1995;34:2125.
2. Suzuki C, Kawai Y, Sasaki K, Kadota K. In: Proc. 3rd Conf. Reactive Plasmas. Nara, Japan: The Japan Society of Applied Physics, 1997. p. 437.
3. Miyata K, Arai H, Kuno T, Hori M, Goto T. In: Proc. 3rd Conf. Reactive Plasmas. Nara, Japan: The Japan Society of Applied Physics, 1997. p. 63.
4. Samukawa S, Nakagawa Y, Tsukada T, Ueyama H, Shinohara K. Jpn J Appl Phys 1995;34:6805.
5. Tachi S, Miyake K, Tokuyama T. Jpn J Appl Phys 1982;21:141.
6. Proc. 15th Dry Process Symposium, The institute of Electrical Engineers of Japan, 1993. p. 193.
7. Tatsumi T, Hayashi H, Morishita S, Noda S, Okigawa M, Itabashi N, Hikosaka Y, Inoue M. Jpn J Appl Phys 1998;37:2394.
8. Itoh H. J Phys D Appl Phys 1991;24:277.
9. Karecki SM, Pruette LC, Rafael Reif L. Mater Res Soc Symp Proc 1997;447:67.
10. Orkin VL, Huie RE, Kurylo MJ. J Phys Chem A 1997;101:9118.
11. Akashi H, Samukawa S, Takahashi N, Sasaki T. Jpn J Appl Phys 1997;36:L877.
12. Samukawa S, Tsukada T. Jpn J Appl Phys 1997;35:7647.
13. Malyshev MV, Donnelly VM, Samukawa S. J Appl Phys 1998;84(3):1222.
14. Karecki SM, Peruette LC, Rafael Reif L. J Vac Sci Technol 1998;A16:755.
15. Levy RA, Zactsev VB, Aryusook K, Ravindranath C, Sigal V. J Mater Res 1998;13(9):2643.
16. Fracassi F, Dagostino R. J Vac Sci Technol 1998;B16:1867.
17. Samukawa S, Tsuda K. Jpn J Appl Phys 1998;37:L1095.
18. Samukawa, S, Mukai T, Tsuda K. J. Vac. Sci. Technol., in press.