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Volumn 1, Issue 1, 2002, Pages 58-62

Novel bilayer bottom antireflective coating structure for high-performance ArF lithography applications

Author keywords

ArF lithography; Bi layer bottom antireflective coating; Deep ultraviolet resist

Indexed keywords


EID: 0005306540     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1447947     Document Type: Article
Times cited : (7)

References (10)
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  • 3
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    • A novel antireflection method with gradient photoabsorption for optical lithography
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    • Tanaka, T.1    Asai, N.2    Uchino, S.3
  • 4
    • 0001426921 scopus 로고    scopus 로고
    • A multi-layer inorganic antireflective system for use in 248 nm deep ultraviolet lithography
    • R. A. Cirelli, G. R. Weber, A. Kornblit, R. M. Baker, E P. Klemens, and J. Demarco, "A multi-layer inorganic antireflective system for use in 248 nm deep ultraviolet lithography." J. Vac. Sci. Technol. B 14(6), 4229-4233 (1996).
    • (1996) J. Vac. Sci. Technol. , vol.B14 , pp. 4229-4233
    • Cirelli, R.A.1    Weber, G.R.2    Kornblit, A.3    Baker, R.M.4    Klemens, F.P.5    Demarco, J.6
  • 5
    • 0033266667 scopus 로고    scopus 로고
    • A multi-layer HMDSO film as bottom antireflective coating for ArF lithography
    • L. A. Wang and H. L. Chen, "A multi-layer HMDSO film as bottom antireflective coating for ArF lithography," J. Vac. Sci. Technol. B 17(6), 2772-2775 (1999).
    • (1999) J. Vac. Sci. Technol. , vol.B17 , Issue.6 , pp. 2772-2775
    • Wang, L.A.1    Chen, H.L.2
  • 6
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    • Evaluation of metal migration and determination of trace metals after microwave digestion for lithographic materials
    • R H. Ko, M. Y. Wang, and T. K. Wang, "Evaluation of metal migration and determination of trace metals after microwave digestion for lithographic materials," Anal. Chem. 71, 5413-5419 (1999).
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    • Ko, R.H.1    Wang, M.Y.2    Wang, T.K.3
  • 7
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    • Inversion of normal-incidence (R,T) measurements to obtain n±ik for thin films
    • T. C. Paulick, "Inversion of normal-incidence (R,T) measurements to obtain n+ik for thin films," Appl. Opt. 25, 562-564 (1986).
    • (1986) Appl. Opt. , vol.25 , pp. 562-564
    • Paulick, T.C.1
  • 8
    • 25944452908 scopus 로고
    • Optical properties of crystalline semiconductors and dielectrics
    • A. R. Forouhi and I. Bloomer, "Optical properties of crystalline semiconductors and dielectrics," Phys. Rev. B 38, 1865-1874 (1988).
    • (1988) Phys. Rev. , vol.B38 , pp. 1865-1874
    • Forouhi, A.R.1    Bloomer, I.2
  • 10
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    • y: H antireflective layer for ArF excimer laser lithography
    • y: H antireflective layer for ArF excimer laser lithography," Jpn. J. Appl. Phys., Part 1 35, 6360-6365 (1996).
    • (1996) Jpn. J. Appl. Phys. , vol.35 , Issue.PART 1 , pp. 6360-6365
    • Ogawa, T.1    Sekiguchi, A.2    Yoshizawa, N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.