Advantages of a SiOxNy:H anti-reflective layer for ArF excimer laser lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 12 B, 1996, Pages 6347-6695

  Ogawa, Tohru ^a   Sekiguchi, Atsushi ^a   Yoshizawa, Noritsugu ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; ELLIPSOMETRY; EXCIMER LASERS; LIGHT INTERFERENCE; OPTICAL VARIABLES CONTROL; OPTICAL VARIABLES MEASUREMENT; PHOTORESISTS; REFRACTIVE INDEX; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; THIN FILMS;

ANTIREFLECTIVE LAYER; ARGON FLUORIDE; HYDROGENATED SILICON OXYNITRIDE; KRYPTON FLUORIDE; LINE WIDTH CONTROL; OPTICAL CONSTANT;

PHOTOLITHOGRAPHY;

EID: 0030394626     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Review

References (7)