Raman scattering and infrared absorption in multiple boron-doped Ge dots

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1420-1424

  Liu, J L ^a   Wu, W G ^a   Tang, Y S ^a   Wang, K L ^a   Radetic, T ^b   Gronsky, R ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005305735     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581830     Document Type: Article

References (27)

1. J.-Y. Marzin, J.-M. Gerand, A. Izrael, D. Barrier, and G. Bastard, Phys. Rev. Lett. 73, 716 (1994).
2. H. Sunamara, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995).
3. O. G. Schmidt, G. Lange, K. Eberl, O. Kienzle, and F. Ernst, Appl. Phys. Lett. 71, 2340 (1997).
4. N. Kirstaedter, N. N. Ledentsov, M. Grundman, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kopev, Zh. I. Alferov, U. Richter, P. Werner, U. Gosele, and J. Heydenreich, Electron. Lett. 30, 1416 (1994).
5. L. West and S. Eglash, Appl. Phys. Lett. 46, 1156 (1985).
6. S. K. Chum, D. S. Pan, and K. L. Wang, Phys. Rev. B 47, 15638 (1993).
7. R. P. G. Karunasiri, J. S. Park, and K. L. Wang, Appl. Phys. Lett. 59, 2588 (1991).
8. P. Kruck, M. Helm, T. Fromherz, G. Bauer, J. F. Nutzel, and G. Abstreiter, Appl. Phys. Lett. 69, 3372 (1996).
9. H. Benisty, C. M. Sottomayor-Torres, and C. Weisbuch, Phys. Rev. B 44, 10945 (1991).
10. U. Bockelmenn and G. Bastard, Phys. Rev. B 42, 8947 (1990).
11. D. Pan, Y. P. Zeng, M. Y. Kong, J. Wu, Y. Q. Zhu, C. H. Zheng, J. M. Li, and C. Y. Wang, Electron. Lett. 32, 1726 (1996).
12. H. Drexler, D. Leonard, W. Hansen, J. P. Kotthaus, G. Medeires-Ribeiro, and P. M. Petroff, Phys. Rev. Lett. 73, 2252 (1994).
13. J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya, Appl. Phys. Lett. 71, 2079 (1997).
14. K. W. Berryman, S. A. Lyon, and M. Segev, Appl. Phys. Lett. 70, 1861 (1997).
15. K. L. Wang and R. P. G. Karunasiri, in Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors, edited by M. O. Manasreh (Artech House, 1993), p. 139.
16. E. Palange, G. Capellini, L. Di Gaspare, and F. Evangelisti, Appl. Phys. Lett. 68, 2982 (1996).
17. S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and X. Wang, Phys. Rev. Lett. 80, 3340 (1998).
18. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
19. P. Schittenhelm, G. Abstreiter, A. Darhuber, G. Bauer, P. Werner, and A. Kosogov, Thin Solid Films 294, 291 (1997).
20. V. Magidson, D. V. Regelman, R. Beserman, and K. Dettmer, Appl. Phys. Lett. 73, 1044 (1998).
21. W. J. Brya, Solid State Commun. 12, 253 (1973).
22. F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, and B. A. Wilson, Appl. Phys. Lett. 45, 1138 (1984).
23. Y. B. Li, R. A. Stradling, L. Artus, S. J. Webb, R. Cusco, S. J. Chung, and A. G. Norman, Semicond. Sci. Technol. 11, 1137 (1996).
24. M. Bendayan, R. Beserman, and K. Dettmer, J. Appl. Phys. 81, 7956 (1997).
25. The number was estimated based on unstrained Ge dots and underlying Si. The presence of strain as evidenced in, for example, Ref. 13, changes the band gaps of Si and Ge, and thus the band offset.
26. S. Sauvage, P. Boucaud, F. H. Julien, J.-M. Gerard, and V. Thierry-Mieg, Appl. Phys. Lett. 71, 2785 (1997).
27. S. Schierker, O. G. Schmidt, K. Eberl, N. Y. Jin-Phillipp, and F. Phillipp, Appl. Phys. Lett. 72, 3344 (1998).