Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 291-294

  Sanz Hervas, A ^a,e   Cho, Soohaeng ^a   Kovalenkov, O V ^a,f   Dickey, S A ^a   Majerfeld, A ^a   Villar, C ^b   Lopez, M ^b   Melliti, R ^c   Wang, G ^c   Tronc, P ^c   Kim, B W ^d  

^a University of Colorado at Boulder   (United States)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c INSTITUT LANGEVIN   (France)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^e UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^f IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

HETERO-INTERFACES; HIGH RESOLUTION X-RAY DIFFRACTOMETRY; MULTI QUANTUM WELL STRUCTURES; MULTIPLE QUANTUM-WELL STRUCTURES; PHOTOREFLECTANCE SPECTRA; PHOTOREFLECTANCE SPECTROSCOPY; STRUCTURAL AND OPTICAL PROPERTIES; VAPOR PHASE EPITAXIAL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 85037520058     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711638     Document Type: Conference Paper

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