High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 727-734

  Mao, E ^a   Dickey, S A ^a   Majerfeld, A ^a   Sanz Hervas A ^b   Kim, B W ^c  

^a University of Colorado at Boulder   (United States)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000863543     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00110-3     Document Type: Article

References (13)

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3. Grey, R., David, J.P.R.D., Hill, G., Pabla, A.S., Pate, M.A., Rees, G.J., Robson, P.N., Rodriguez-Girones, P.J., Sale, T.E., Woodhead, J., Fisher, T.A., Hogg, R.A., Mowbray, D.J., Skolnick, M.S., Wittaker, D.M. and Willcox, A.R.K. Growth of pseudomorphic InGaAs/GaAs quantum wells for strained layer piezoelectric optoelectronic devices, Microelectronics J., 26 (1995) 811.
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8. Dzurko, K.M., Hummell, S.G., Menu, E.P. and Dapkus, P.D. MOCVD growth of AlGaAs/GaAs structures on nonplanar {111} substrates: evidence for lateral gas phase diffusion, J. Electron. Mater., 19 (1990) 1367.
9. Fuke, S., Uemeura, M., Yamada, N., Kuwahara, K. and Imai, T. Morphology of GaAs homoepitaxial layer grown on (111)A substrate planes by organometallic vapor phase deposition, J. Appl. Phys., 68 (1990) 97.
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13. Mao, E., Lu, Z.H., Kim, B.W., McCormick, T., Oh, E.G. and Majerfeld, A. Very high quality GaAs/ AlGaAs multiple quantum well structures grown by atmospheric pressure MOVPE, Electrochem. Soc. Proc., 92-20 (1992) 255.