Photoreflectance study of [111] GaAs/AlGaAs quantum wells at room temperature

Physica Status Solidi (A) Applied Research

Volumn 164, Issue 1, 1997, Pages 117-121

  Wang, G ^a   Tronc, P ^a   Melliti, R ^a   Mao, E ^b   Majerfeld, A ^b   Sanz Hervas, A ^c   Depeyrot, J ^d   Kim, B W ^e  

^a INSTITUT LANGEVIN   (France)

^b UCB 450   (United States)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^d UNIVERSITY OF BRASILIA   (Brazil)

^e Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BAND STRUCTURE; CRYSTAL ORIENTATION; ELECTRON TRANSITIONS; FUNCTIONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

ASPNES THIRD DERIVATIVE FUNCTIONS; OPTICAL TRANSITIONS; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031271540     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199711)164:1<117::AID-PSSA117>3.0.CO;2-4     Document Type: Article

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