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Volumn 160, Issue 3-4, 1996, Pages 406-412

The strain energy density of cubic epitaxial layers

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; ELASTICITY; EPITAXIAL GROWTH; METALS; PARAMETER ESTIMATION; SEMICONDUCTOR MATERIALS; STRAIN;

EID: 0030109403     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00918-3     Document Type: Article
Times cited : (19)

References (29)
  • 3
    • 0028196464 scopus 로고
    • H. Lüth, Surf. Sci. 299/300 (1994) 867.
    • (1994) Surf. Sci. , vol.299-300 , pp. 867
    • Lüth, H.1
  • 12
    • 84859538906 scopus 로고
    • R. People and J.C. Bean, Appl. Phys. Lett. 47 (1985) 322; 49 (1986) 229.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 229
  • 15
    • 0000663381 scopus 로고
    • Ed. D.T.J. Hurle North-Holland, Amsterdam
    • A. Zunger, Handbook of Crystal Growth, Vol. 3, Ed. D.T.J. Hurle (North-Holland, Amsterdam, 1994) p. 997.
    • (1994) Handbook of Crystal Growth , vol.3 , pp. 997
    • Zunger, A.1
  • 17
    • 0026366908 scopus 로고
    • E. Anastassakis, J. Appl. Phys. 68 (1990) 4561; J. Crystal Growth 114 (1991) 647.
    • (1991) J. Crystal Growth , vol.114 , pp. 647
  • 23
    • 0038940676 scopus 로고    scopus 로고
    • note
    • (hkl) must have zero derivatives with respect to the spherical polar angles at high symmetry points. This makes the occurrence of other turning points in their vicinity unlikely.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.