Photoelectron diffraction study of the Si(001)c(4×4)-C surface

Journal of Electron Spectroscopy and Related Phenomena

Volumn 101-103, Issue , 1999, Pages 239-243

  Kosugi, R ^a   Abukawa, T ^a   Shimomura, M ^a   Sumitani, S ^a   Yeom, H W ^b   Hanano, T ^a   Tono, K ^b   Suzuki, S ^a   Sato, S ^a   Ohta, T ^b   Kono, S ^a   Takakuwa, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

C2H4; Carbonization; Initial stage 3C SiC growth; Si(001)c(4 4) C surface; Surface alloy; Synchrotron radiation; X ray photoelectron diffraction

Indexed keywords

EID: 0004390991     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0368-2048(98)00452-6     Document Type: Article

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