Characterization of surface potential and strain at ultrathin oxide/silicon interface by photoreflectance spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1073-1076

  Imai, Takaaki ^a   Fujimoto, Akira ^b   Okuyama, Masanori ^a   Hamakawa, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Modulation spectroscopy; Photoreflectance; Si; Si SiO2 interface; Strain; Surface potential

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LIGHT MODULATION; MIRRORS; MONOCHROMATORS; PHOTOMULTIPLIERS; SEMICONDUCTOR LASERS; SILICA; SPECTROSCOPY; STRAIN; SURFACES; ULTRATHIN FILMS;

MODULATION SPECTROSCOPY; PHOTOREFLECTANCE MEASUREMENT; PHOTOREFLECTANCE SPECTROSCOPY; SURFACE POTENTIAL; XENON DISCHARGE LAMP;

SEMICONDUCTING SILICON;

EID: 0030080392     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1073     Document Type: Article

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