Control of RIE-induced surface damage and junction leakage current in field isolation process

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 198-201

  Yamaguchi, T ^a   Sasaki, T ^a   Nikoh, H ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; OXIDATION; REACTIVE ION ETCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON NITRIDE; STACKING FAULTS; SURFACE PHENOMENA;

CHEMICAL DRY ETCHING; FIELD ISOLATION PROCESS; OXIDATION INDUCED STACKING FAULTS; SURFACE DAMAGE; THERMAL WAVE MEASUREMENT;

CRYSTAL DEFECTS;

EID: 0029699990     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)