Low-energy ion assisted deposition of epitaxial gallium nitride films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 406-410

  Gerlach, J W ^a   Schrupp, D ^a   Volz, K ^a   Zeitler, M ^a   Rauschenbach, B ^a   Anders, A ^b  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Channeling RBS; Constricted glow discharge plasma source; Gallium nitride; Ion assisted deposition; X ray pole figures

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; GLOW DISCHARGES; MORPHOLOGY; PLASMA SOURCES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SURFACE TOPOGRAPHY; TEXTURES;

GALLIUM NITRIDE; LOW-ENERGY ION ASSISTED DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0033513743     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00681-8     Document Type: Article

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